2023
DOI: 10.1021/acsnano.3c10775
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Solution-Processed Robust Multifunctional Memristor of 2D Layered Material Thin Film

Puranjay Saha,
Muhammed Sahad E,
Sandaap Sathyanarayana
et al.

Abstract: Memristors have gained significant attention recently due to their unique ability to exhibit functionalities for brain-inspired neuromorphic computing. Here, we demonstrate a high-performance multifunctional memristor using a thin film of liquid-phase exfoliated (LPE) 2D MoS 2 pinched between two electrodes. Nanoscale inspection of a solution-processed MoS 2 thin film using scanning electron and scanning probe microscopies revealed the high-quality and defect-free nature. Systematic current−voltage (I−V) chara… Show more

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Cited by 9 publications
(9 citation statements)
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“…We then examined the resistive switching (RS) property by recording the current–voltage ( I–V ) characteristics. Figure b represents a recorded I–V characteristic in a loop (0 to +1.5 V, +1.5 to −2.5 V, and back to 0 V), which depicts pinched hysteresis nature as the fingerprint sign of bistable nonvolatile resistive switching (NVRS) behavior. , Interestingly, it shows a current On/Off ratio higher than 10 3 as shown in Figure S3a. To probe the role of electrodes only, we performed a control experiment by recording I–V curves for an ITO/EGaIn device in multiple loops of similar parameter like previous and it shows a true metal/metal contact-like behavior as shown in Figure S3b .…”
Section: Results and Discussionmentioning
confidence: 96%
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“…We then examined the resistive switching (RS) property by recording the current–voltage ( I–V ) characteristics. Figure b represents a recorded I–V characteristic in a loop (0 to +1.5 V, +1.5 to −2.5 V, and back to 0 V), which depicts pinched hysteresis nature as the fingerprint sign of bistable nonvolatile resistive switching (NVRS) behavior. , Interestingly, it shows a current On/Off ratio higher than 10 3 as shown in Figure S3a. To probe the role of electrodes only, we performed a control experiment by recording I–V curves for an ITO/EGaIn device in multiple loops of similar parameter like previous and it shows a true metal/metal contact-like behavior as shown in Figure S3b .…”
Section: Results and Discussionmentioning
confidence: 96%
“…Figure b represents a recorded I–V characteristic in a loop (0 to +1.5 V, +1.5 to −2.5 V, and back to 0 V), which depicts pinched hysteresis nature as the fingerprint sign of bistable nonvolatile resistive switching (NVRS) behavior. , Interestingly, it shows a current On/Off ratio higher than 10 3 as shown in Figure S3a. To probe the role of electrodes only, we performed a control experiment by recording I–V curves for an ITO/EGaIn device in multiple loops of similar parameter like previous and it shows a true metal/metal contact-like behavior as shown in Figure S3b . In addition, we performed various control I–V tests by varying bias voltage sweep parameters like sweep direction, starting voltage, and scan speed for different devices and observed consistent nonvolatile RS behavior for successively recorded multiple loops (Figure S4).…”
Section: Results and Discussionmentioning
confidence: 96%
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