Versatile Titanium Carbide MXene Thin-Film Memristors with Adaptive Learning Behavior

Abstract

With the advent of the modern era, there is a huge demand for memristor-based neuromorphic computing hardware to overcome the von Neumann bottleneck in traditional computers. Here, we have prepared two-dimensional titanium carbide (Ti 3 C 2 T x ) MXene following the conventional HF etching technique in solution. After confirmation of Ti 3 C 2 T x properties by Raman scattering and crystallinity measurements, high-quality thin-film deposition is realized using an immiscible liquid−liquid interfacial growth technique. Following this, the memristor is fabricated by sandwiching a Ti 3 C 2 T x layer with a thickness of 70 nm between two electrodes. Subsequently, current−voltage (I−V) characteristics are measured, revealing a nonvolatile resistive switching property characterized by a swift switching speed of 30 ns and an impressive current On/Off ratio of approximately 10 3 . Furthermore, it exhibits endurance through 500 cycles and retains the states for at least 1 × 10 4 s without observable degradation. Additionally, it maintains a current On/Off ratio of about 10 2 while consuming only femtojoules (fJ) of electrical energy per reading. Systematic I−V results and conductive AFM-based current mapping image analysis are converged to support the electroforming mediated filamentary conduction mechanism. Furthermore, our Ti 3 C 2 T x memristor was found to be truly versatile as an all-in-one device for demonstrating edge computation, logic gate operation, and classical conditioning of learning by the brain in Psychology.

Unveiling Negative Differential Resistance and Superionic Conductivity: Water Anchored on Layered Materials

“…Semiconducting layered two-dimensional (2D) van der Waals (vdW) materials, particularly transition metal dichalcogenides (TMDs), have emerged as promising candidates for a wide range of applications, owing to their versatile mechanical, chemical, electrical, and optical properties. , Current research endeavors are focused on harnessing the negative differential resistance (NDR) effect using 2D vdW materials through the formation of hybrid or standard heterojunctions. This exploration holds significant promise for advancing signal processing, data-storage technology, amplifiers, multivalued logic systems, and neuromorphic computing. , The NDR effect is a nonlinear electronic transport phenomenon, wherein the device current decreases as the applied bias voltage increases. Since Leo Esaki introduced the tunnel diode in 1958, based on heavily doped narrow p–n junctions of germanium, the demonstration of NDR properties in thin-film-based electronic devices has captivated researchers .…”