Solution-processed polyfluorene–ZnO nanoparticles ambipolar light-emitting field-effect transistor

Алешин, А. Н.; Щербаков, И. П.; Petrov, V. N.; Titkov, A. N.

doi:10.1016/j.orgel.2011.04.017

Cited by 51 publications

(28 citation statements)

References 32 publications

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“…Electronic properties of thin and ultra-thin conjugated organic films and of their hetero-junctions with metals and inorganic semiconductors have attracted scientific interest because of possible applications in chemical sensing, light-emitting and photovoltaic devices [1][2][3][4][5]. The surface science techniques were used successfully to characterize the interfacial band alignment and the density of the electronic states at organic film interfaces with metal and semiconductor surfaces [6,7].…”

Section: Introductionmentioning

confidence: 99%

Low-energy electron transmission for the analysis of the interface barrier formation and the density of the unoccupied electronic states in the ultra-thin layers of fluorinated copper-phthalocyanine

Komolov¹,

Lazneva²,

Akhremtchik³

et al. 2015

Organic Photonics and Photovoltaics

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Abstract:The interfacial structure made from the thermally deposited 5 -7 nm thick layers of hexadecafluoro copper phthalocyanine (F 16 -CuPc) and of the unsubstituted copper phthalocyanine (CuPc) was subjected to the studies. The surface work function and the density of the unoccupied electron states (DOUS) located 5-20 eV above the Fermi level (E F ) were investigated during the CuPc/F 16 -CuPc interface formation using the very low energy electron diffraction (VLEED) method and the total current spectroscopy (TCS) measurement scheme. The DOUS peak structure of the organic films studied obtained from the TCS results showed a good correspondence to the main π* and σ* DOUS bands obtained from the density functional theory (DFT) calculations. The interfacial barrier was characterized by the negative charge transfer from the CuPc overlayer to the F 16 -CuPc underlayer occurred within the 5 nm thick interfacial region in the CuPc overlayer which was accompanied by the decrease of the surface work function from 4.9±0.1 eV to 4.3±0.1 eV. The stabilization of the π* DOUS bands, as well as restructuring of the low lying σ* bands was observed in the in the case of the fluorinated film (F 16 -CuPc) compared to the case of the unsubstituted CuPc film.

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Section: Introductionmentioning

confidence: 99%

Low-energy electron transmission for the analysis of the interface barrier formation and the density of the unoccupied electronic states in the ultra-thin layers of fluorinated copper-phthalocyanine

Komolov¹,

Lazneva²,

Akhremtchik³

et al. 2015

Organic Photonics and Photovoltaics

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“…Близкие значения подвижности были получены и для ря-да других ПТ на основе CH 3 NH 3 PbBr 3 с токами отклю-чения порядка ∼ 8 · 10 −8 −10 −7 A. Отношения on / off, полученные из передаточных характеристик, показанных на рис. 5, b, составляли ∼ 10 3 −10 4 при отрицательных и положительных V G (−18 V и +18 V), что по поряд-ку величины близко к значениям on / off, полученным для органических ПТ на основе композитов полимер-наночастицы ZnO [15,16]. При освещении ПТ на ос-нове CH 3 NH 3 PbBr 3 с помощью имитатора солнечного света наблюдалось слабое увеличение I SD (8−10% при V SD = −10 V) и небольшой сдвиг порогового напряже-ния V th (от ∼ −3.6 и ∼ −0.8 V в темноте к ∼ 3.4 V и ∼ 1.4 V при освещении для отрицательных и положи-тельных V G соответственно).…”

Section: Introductionunclassified

Полевые транзисторы с высокой подвижностью и малым гистерезисом передаточных характеристик на основе пленок CH-=SUB=-3-=/SUB=-NH-=SUB=-3-=/SUB=-PbBr-=SUB=-3-=/SUB=-

Алешин¹,

Щербаков²,

Трапезникова³

et al. 2017

Физика Твердого Тела

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Получены полевые транзисторные (ПТ) структуры на основе растворимых металлорганических перовскитов --- CH3NH3PbBr3 и исследованы их электрические свойства. Показано, что ПТ на основе пленок CH3NH3PbBr3 демонстрируют вольт-амперные характеристики (ВАХ), характерные для амбиполярных ПТ с режимом насыщения. Обнаружено, что передаточные характеристики ПТ на основе CH3NH3PbBr3 обладают незначительным гистерезисом и слабо зависят от напряжения на стоке--истоке. Значения подвижности носителей заряда (дырок), рассчитанные из ВАХ ПТ на основе CH3NH3PbBr3 при 300 K в режимах насыщения и слабых полей, составили ~ 5 cm2/Vs и ~2 cm2/Vs соответственно, а подвижность электронов ~ 3 cm2/Vs, что превышает значение подвижности ~ 1 cm2/Vs, полученное ранее для ПТ на основе CH3NH3PbI3. Работа выполнена при частичной поддержке Программ фундаментальных исследований ПРАН 1.8П и 1.25П и гранта РФФИ N 15-02-01897. DOI: 10.21883/FTT.2017.12.45248.108

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“…These nanohybrid materials show considerable 66 improvement in electronic and optical properties that 67 cannot be achieved using conventional composites or 68 pure polymers [5]. In addition the use of hybrid (semicon-69 ducting polymer/inorganic nanoparticles) materials as 70 active layers of OFETs also leads to remarkable mobility 71 increase (up to $2 cm 2 /V s) and threshold voltage reduc-72 tion with increase of the concentration of inorganic nano-73 particles [6,7]. In order to enhance the effective mobility in 74 OFETs the hybrid thin-films containing organic semicon-75 ductors (PQT-12 or P3HT) and graphene flakes have been 76 demonstrated recently [8].…”

Section: Introductionmentioning

confidence: 99%

Poly(9-vinylcarbazole)–graphene oxide composite field-effect transistors with enhanced mobility

Алешин

Щербаков

Komolov

et al. 2015

Organic Electronics

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Solution-processed polyfluorene–ZnO nanoparticles ambipolar light-emitting field-effect transistor

Cited by 51 publications

References 32 publications

Low-energy electron transmission for the analysis of the interface barrier formation and the density of the unoccupied electronic states in the ultra-thin layers of fluorinated copper-phthalocyanine

Low-energy electron transmission for the analysis of the interface barrier formation and the density of the unoccupied electronic states in the ultra-thin layers of fluorinated copper-phthalocyanine

Полевые транзисторы с высокой подвижностью и малым гистерезисом передаточных характеристик на основе пленок CH-=SUB=-3-=/SUB=-NH-=SUB=-3-=/SUB=-PbBr-=SUB=-3-=/SUB=-

Poly(9-vinylcarbazole)–graphene oxide composite field-effect transistors with enhanced mobility

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