Solution-Processed Polyfluorene:Naphthalenediimide–N-Doped TiO2 Hybrids for Ultraviolet Photodetector Applications

Memişoğlu, Görkem; Varlıklı, Canan; Diker, Halide

doi:10.1007/s11664-013-2730-9

Cited by 8 publications

(15 citation statements)

References 51 publications

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“…The photoresponsivity values of the conventional device are comparable with those of the commercial UV-PDs and much higher than the value we could obtain with solution processed UV-PD with the active layer of PFE:BNDI:TiO 2 ; i.e. 156 mA/W for the pure TiO 2 , 545 mA/W for the nitrogen doped TiO 2 , which was further increased to 597 mA/W with annealing [9]. From this point of the manuscript PFE:BNDI:TiO 2 refers the device prepared with pure TiO 2 doping.…”

Section: Resultssupporting

confidence: 49%

“…Electrical characterizations were performed in a glove box under nitrogen environment. Ground and excited state energy levels of PFE, BNDI, and ZnO are taken from the literature [9,18].…”

Section: = 60mentioning

confidence: 99%

“…

Abstract:The optical and electrical properties of conventional and inverted type ultraviolet photodetectors (UVPDs) with active layers of poly (9,

…”

mentioning

confidence: 99%

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High photoresponse from solution processed conventional and inverted ultraviolet photodetectors

Memişoğlu

Varlıklı²

2016

Turk J Elec Eng & Comp Sci

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Section: Resultssupporting

confidence: 49%

“…Electrical characterizations were performed in a glove box under nitrogen environment. Ground and excited state energy levels of PFE, BNDI, and ZnO are taken from the literature [9,18].…”

Section: = 60mentioning

confidence: 99%

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High photoresponse from solution processed conventional and inverted ultraviolet photodetectors

Memişoğlu

Varlıklı²

2016

Turk J Elec Eng & Comp Sci

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“…The course of the absorption values at 365 nm and photoresponsivity values obtained at different annealing temperatures were the same. The temperature of 75 • C corresponds to the T g of the polymer and enhancing the photoresponse as a result of annealing at T g is known in literature [33,34]. The ratio of the photocurrent to the dark current for all doping fractions and annealing temperatures is around 10 4 .…”

Section: The Electrical Characteristics Of Uv-pdmentioning

confidence: 97%

An ultraviolet photodetector with an active layer composed of solution processed polyfluorene:Zn0.71Cd0.29S hybrid nanomaterials

Sevim

Memişoğlu

Varlıklı

et al. 2014

Applied Surface Science

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a b s t r a c tAn ultraviolet photodetector with an active layer of solution processed polymer:quantum dot hybrid is introduced. Poly[9,9-di-(2-ethylhexyl)-fluorenyl-2,7-diyl] represents the polymer and Zn 0.71 Cd 0.29 S is the quantum dot used for the device. Photophysical studies showed that an electron transfer from the polymer to the ternary quantum dot is thermodynamically favored. Quenching experiments performed between the polymer and quantum dot indicates the formation of a non-fluorescent complex with an association constant of 4.6 × 10 4 M −1 . The device structure of ITO/PEDOT:PSS/ADS231BE: 50 wt% Zn 0.71 Cd 0.29 S/Al yielded a photoresponsivity value of 324 mA/W at −4 V under 1 mW/cm 2 illumination at 365 nm at room temperature and this value is further increased to 380 mA/W as a result of annealing at 75 • C.

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“…Quartz substrates were cleaned by the general method [19,20]. Before coating the organic layers, they were treated with O 2 plasma for 5 min at 60 W. P3HT (10 mg/mL) and HHPER (10 mg/mL) were dissolved in chlorobenzene and P3HT:HHPER blends with different w/w (4:1, 3:1, 2:1, 1:1, 1:2, and 1:3) were coated on quartz substrates at 1500 rpm.…”

Section: Sample Preparation For Optical Investigationsmentioning

confidence: 99%

Solution processable graphene oxide hole transport layers and their application in P3HT:HHPER active layer based BHJSC

MEMİŞOĞLU¹,

DİKER²,

Varlıklı³

2015

Turk J Phys

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Graphene oxide (GO) material was synthesized by an improved Hummers method and characterized by FT-IR, XPS, XRD, AFM, SEM, and UV-VIS analyses. The thickness of the GO layer was measured as 1.5 nm. Solution processed bulk heterojunction solar cells comprising poly(3-hexylthiophene) (P3HT) as the electron donor and N,N'-bis-2-(1-hydoxyhexyl)-3,4,9,10-perylenebis(dicarboximide) (HHPER) as the electron acceptor component of the active layer were produced with and without the GO doped PEDOT-PSS hole transport layers. The optical investigations of the active layer were performed by ground state absorption and photoluminescence measurements. Optimized blend w/w was determined as P3HT:HHPER, 3:1. It was found that the presence of GO in PEDOT:PSS by 0.05 w/w reduces the charge transfer resistance and enhances not only the Jsc , but also V oc values. However, it cannot inhibit V oc losses obtained through annealing the active layer at temperatures higher than 120• C.

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Solution-Processed Polyfluorene:Naphthalenediimide–N-Doped TiO2 Hybrids for Ultraviolet Photodetector Applications

Cited by 8 publications

References 51 publications

High photoresponse from solution processed conventional and inverted ultraviolet photodetectors

High photoresponse from solution processed conventional and inverted ultraviolet photodetectors

An ultraviolet photodetector with an active layer composed of solution processed polyfluorene:Zn0.71Cd0.29S hybrid nanomaterials

Solution processable graphene oxide hole transport layers and their application in P3HT:HHPER active layer based BHJSC

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