Solution-Processed Organic Field Effect Transistor Using a Liquid Crystalline Semiconductor, 8TNAT8

Abstract

In this study, we used a liquid crystalline (LC) semiconductor, 8TNAT8, solutions (e.g. 0.1 wt% in toluene) for forming an organic semiconductor layer by solution casting method, and fabricated field effect transistors (FETs) with top-contact/bottom-gate (TCBG) and bottom-contact/bottom-gate (BGBC) geometries. These LC semiconductorsshow FET characteristic properties and have high carrier mobilities of 0.08 and 0.01 cm 2 V −1 s −1 for TCBG and BCBG type FETs, respectively. We have also investigated the influence of electrode surface modification for a BCBG type FET. These results imply 8TNAT8 is a candidate for solution-processed FETs.