Solution-processed MoOx hole injection layer towards efficient organic light-emitting diode

Zhang, Xiaowen; You, Fengjiao; Zheng, Qinghong; Zhang, Zheling; Cai, Ping; Xue, Xiaogang; Xiong, Jian; Zhang, Jian

doi:10.1016/j.orgel.2016.09.022

Cited by 46 publications

(33 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our results are also in good agreement with other reports that magnetron sputtered MoO x contains Mo 5+ and Mo 6+ cations with slight oxygen deficiencies . The non‐stoichiometric property in MoO x gives extra electronic characteristics, which tailors hole injection performance in OLEDs …”

Section: Resultssupporting

confidence: 92%

“…Molybdenum oxide is consequently expressed as MoO x with x = 2.97 in this study based on the XPS analysis. It is quite similar to vacuum thermally‐evaporated MoO x ( x = 2.98) and solution‐processed MoO x ( x = 2.96) . Our results are also in good agreement with other reports that magnetron sputtered MoO x contains Mo 5+ and Mo 6+ cations with slight oxygen deficiencies .…”

Section: Resultssupporting

confidence: 91%

“…It is well acknowledged that the WF of MoO x interlayer plays a key role in governing hole injection characteristics, which can be facilely obtained from the secondary electron cut‐off of UPS measurement. As shown in Figure (a), the cut‐off shifts toward lower binding energy with magnetron sputtered MoO x or thermally‐evaporated MoO x covering onto ITO surface, suggesting an enhanced WF, since the WF is supposed to be the difference between the energy of He I line (21.22 eV) and the calibrated cut‐off value of UPS spectrum . Based on our UPS measurements, the WFs are estimated to be ∼5.2 eV for thermally‐evaporated MoO x and ∼5.3 eV for magnetron sputtered MoO x , which are considerably enhanced as compared with ITO (∼4.8 eV).…”

Section: Resultsmentioning

confidence: 78%

“…Owing to potential applications to next‐generation displays and solid‐state lightings, organic light‐emitting diodes (OLEDs) have been received increasing attentions in recent years. It is well established that carrier balance plays a key role in promoting OLED efficiency . Hole injection layer (HIL) and electron injection layer sandwiched between indium tin oxide (ITO)/hole transport layer (HTL) and electron transport layer (ETL)/cathode, respectively, are widely accepted to fulfill such a function.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

The Feasibility of Using Magnetron Sputtered MoO _x as Effective Hole Injection Layer in Organic Light-Emitting Diode

Liu

Wang

et al. 2018

Phys. Status Solidi A

Self Cite

View full text Add to dashboard Cite

Favorite transition metal oxide of MoOx is facilely deposited by using magnetron sputtering process and cast successful application to organic light‐emitting diodes (OLEDs). Magnetron sputtered MoOx is characterized in details with X‐ray diffraction, scanning electron microscopy, atomic force microscopy, X‐ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. Magnetron sputtered MoOx shows amorphous structure, superior film morphology, non‐stoichiometry with slight oxygen deficiency and enhanced surface work function, which favorably contributes to hole injection promotion and efficiency improvement. The OLED with magnetron sputtered MoOx as hole injection layer behaves comparable performance to the counterpart with conventional vacuum thermally‐evaporated MoOx. The results demonstrate that magnetron sputtering technique provides an alternative approach for fabricating MoOx interfacial layer in organic electronic devices.

show abstract

Section: Resultssupporting

confidence: 92%

Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The Feasibility of Using Magnetron Sputtered MoO _x as Effective Hole Injection Layer in Organic Light-Emitting Diode

Liu

Wang

et al. 2018

Phys. Status Solidi A

Self Cite

View full text Add to dashboard Cite

show abstract

“…In addition to vacuum thermal deposition, solution‐processed techniques with low cost and scalable manufacturing accelerate mass production. Favorite HILs of transition metal oxides such as MoO x , VO x , NiO x , La 2 O 3 , and WO 3 have developed toward solubilizing in recent years. MoO x with unique energetics of high work function and strong dipole effect attracted special attention in numerous works …”

Section: Some Key Parameters Of Studied Oleds With Different Hilsmentioning

confidence: 99%

Solution‐Processed Composite Interfacial Layer of MoO_x‐Doped Graphene Oxide for Robust Hole Injection in Organic Light‐Emitting Diode

Zheng

Zhang

et al. 2018

Physica Rapid Research Ltrs

Self Cite

View full text Add to dashboard Cite

Solution‐processed composite hole injection interfacial layer (HIL) of MoOx‐doped graphene oxide (GO + MoOx) is facilely fabricated. Using GO + MoOx HIL, we demonstrate highly efficient tris(8‐hydroxy‐quinolinato)aluminum‐based organic light‐emitting diodes with maximum luminous efficiency of 8.6 cd A−1, power efficiency of 5.7 lm W−1, and external quantum efficiency of 3.5%, which have been enhanced by 41.0% (75.5%), 39.0% (96.6%), and 40.0% (75.0%), respectively, in comparison with the counterpart using simple HIL of MoOx (GO). Atomic force microscopy and X‐ray/ultraviolet photoelectron spectroscopy measurements show GO + MoOx behaving superior film morphology and extra electronic properties such as enhanced surface work function. Current–voltage characteristics and impedance spectroscopy of hole only cells elucidate that GO + MoOx substantially promotes hole injection and thus accounts for excellent device performance. Our results pave a way for advancing organic electronic devices with solution process as well as boosting GO application.

show abstract

Copper (I) Selenocyanate (CuSeCN) as a Novel Hole‐Transport Layer for Transistors, Organic Solar Cells, and Light‐Emitting Diodes

Wijeyasinghe

Tsetseris

Regoutz

et al. 2018

Adv Funct Materials

View full text Add to dashboard Cite

The synthesis and characterization of copper (I) selenocyanate (CuSeCN) and its application as a solution-processable hole-transport layer (HTL) material in transistors, organic light-emitting diodes, and solar cells are reported. Density-functional theory calculations combined with X-ray photoelectron spectroscopy are used to elucidate the electronic band structure, density of states, and microstructure of CuSeCN. Solution-processed layers are found to be nanocrystalline and optically transparent (>94%), due to the large bandgap of ≥3.1 eV, with a valence band maximum located at −5.1 eV. Hole-transport analysis performed using field-effect measurements confirms the p-type character of CuSeCN yielding a hole mobility of 0.002 cm 2 V −1 s −1 . When CuSeCN is incorporated as the HTL material in organic light-emitting diodes and organic solar cells, the resulting devices exhibit comparable or improved performance to control devices based on commercially available poly(3,4-ethy lenedioxythiophene):polystyrene sulfonate as the HTL. This is the first report on the semiconducting character of CuSeCN and it highlights the tremendous potential for further developments in the area of metal pseudohalides.

show abstract

Solution-processed MoOx hole injection layer towards efficient organic light-emitting diode

Cited by 46 publications

References 37 publications

The Feasibility of Using Magnetron Sputtered MoO _x as Effective Hole Injection Layer in Organic Light-Emitting Diode

The Feasibility of Using Magnetron Sputtered MoO _x as Effective Hole Injection Layer in Organic Light-Emitting Diode

Solution‐Processed Composite Interfacial Layer of MoO_x‐Doped Graphene Oxide for Robust Hole Injection in Organic Light‐Emitting Diode

Copper (I) Selenocyanate (CuSeCN) as a Novel Hole‐Transport Layer for Transistors, Organic Solar Cells, and Light‐Emitting Diodes

Contact Info

Product

Resources

About

Solution-processed MoOx hole injection layer towards efficient organic light-emitting diode

Cited by 46 publications

References 37 publications

The Feasibility of Using Magnetron Sputtered MoO x as Effective Hole Injection Layer in Organic Light-Emitting Diode

The Feasibility of Using Magnetron Sputtered MoO x as Effective Hole Injection Layer in Organic Light-Emitting Diode

Solution‐Processed Composite Interfacial Layer of MoOx‐Doped Graphene Oxide for Robust Hole Injection in Organic Light‐Emitting Diode

Copper (I) Selenocyanate (CuSeCN) as a Novel Hole‐Transport Layer for Transistors, Organic Solar Cells, and Light‐Emitting Diodes

Contact Info

Product

Resources

About

The Feasibility of Using Magnetron Sputtered MoO _x as Effective Hole Injection Layer in Organic Light-Emitting Diode

The Feasibility of Using Magnetron Sputtered MoO _x as Effective Hole Injection Layer in Organic Light-Emitting Diode

Solution‐Processed Composite Interfacial Layer of MoO_x‐Doped Graphene Oxide for Robust Hole Injection in Organic Light‐Emitting Diode