2023
DOI: 10.3390/nano13081331
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Solution-Processed Metal Oxide Nanostructures for Carrier Transport

Abstract: Metal oxide semiconductors represent a unique class of materials that show prominent optoelectronic applications nowadays [...]

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Cited by 2 publications
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“…One of the key factors that directly affects the performance of i OSC devices is an electron transport layer (ETL), which is especially important for controlling interface morphology properties between the ITO cathode and photoactive layer and simultaneously plays a role as a hole-blocking layer. , Among several kinds of ETL materials, n-type metal oxides (MOs) (e.g., ZnO and TiO 2 ) exhibit the advantages in terms of their high stability, high electron mobility, low conduction band, and ability to effectively tune the high WF of ITO cathodes in i OSCs. , However, MO ETLs often suffer from problems caused by their hydrophilic surfaces due to the presence of hydroxyl groups and the existence of defects, such as oxygen vacancies and zinc interstitium, leading to low device performance due to high charge trapping and recombination at the MO ETL/photoactive interface. To overcome these problems, inserting an interfacial modifier (IM), such as small molecules with polar functional groups (carboxylic acids, amine, and so on ), nonconjugated polymer electrolytes (NPEs), or conjugated polymer electrolytes (CPEs), onto the surface of MO ETLs is a promising strategy to upgrade both the photovoltaic performance and device stability of i OSCs.…”
Section: Introductionmentioning
confidence: 99%
“…One of the key factors that directly affects the performance of i OSC devices is an electron transport layer (ETL), which is especially important for controlling interface morphology properties between the ITO cathode and photoactive layer and simultaneously plays a role as a hole-blocking layer. , Among several kinds of ETL materials, n-type metal oxides (MOs) (e.g., ZnO and TiO 2 ) exhibit the advantages in terms of their high stability, high electron mobility, low conduction band, and ability to effectively tune the high WF of ITO cathodes in i OSCs. , However, MO ETLs often suffer from problems caused by their hydrophilic surfaces due to the presence of hydroxyl groups and the existence of defects, such as oxygen vacancies and zinc interstitium, leading to low device performance due to high charge trapping and recombination at the MO ETL/photoactive interface. To overcome these problems, inserting an interfacial modifier (IM), such as small molecules with polar functional groups (carboxylic acids, amine, and so on ), nonconjugated polymer electrolytes (NPEs), or conjugated polymer electrolytes (CPEs), onto the surface of MO ETLs is a promising strategy to upgrade both the photovoltaic performance and device stability of i OSCs.…”
Section: Introductionmentioning
confidence: 99%