Solution-processed, low voltage tantalum-based memristive switches

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

“…Diverse solution synthesis methods (hydrothermal, [71][72][73] anodization, [74,75] and sol-gel [76][77][78][79] ) have been reported for the production of solution-based metal oxide RRAM. However, the most common is the sol-gel method, which is subdivided into two main routes: the nanoparticle (NP)-based process [80] and Figure 6.…”

Review of Anodic Tantalum Oxide Nanostructures: From Morphological Design to Emerging Applications

“…In addition to this, efforts have been dedicated to explore the memristive behavior of anodic Ta 2 O 5 films. ,, M. Diamanti et al conducted a systematic investigation, comparing the memristive properties of anodic Ti, Ta, and Nb oxide films formed in phosphoric acid at different potentials (10, 20, 25, and 30 V). The oxide film thickness was controlled in the range 30–200 nm.…”

“…The development of innovative synthetic strategies to control the shape and size of nanostructured transition metal oxides (TMOs) has always been considered an important area of research. − Nanostructured TMOs hold significant importance due to their numerous potential applications, ranging from energy harvesting technologies to biomaterials. − Various synthetic procedures, such as hydrothermal, solvothermal, sol–gel, vapor phase deposition, chemical vapor deposition (CVD), electrodeposition, and electrochemical anodization, can be employed to fabricate nanostructures of TMO. , However, among all of these synthetic strategies, electrochemical anodization is considered a simple, cost-effective, and scalable method for producing TMO nanostructures with the potential to control their morphology and purity. , In particular, the fabrication of oxide nanostructures of various valve metals, e.g., Ti, Nb, Ta, Hf, and W by anodization has been widely investigated in the last two decades. − This method has yielded promising results in various technologically important fields, including hydrogen production, electrochromic devices, corrosion-resistant coatings, solar cells, batteries, sensors, capacitors, catalysts, and biomedical devices. − Tantalum oxide (Ta 2 O 5 ) characterized by unique properties like high melting point, chemical inertness, and extraordinary refractive index holds significance as a crucial material. − , Tantalum can exist in either the +5 or +4 oxidation state, depending on the oxide phase, i.e., Ta 2 O 5 and TaO 2 , respectively. − However, Ta 2 O 5 is considered thermodynamically the most stable state. The fabrication of Ta 2 O 5 , particularly by the anodization method, has been intensively investigated in different inorganic (H 2 SO 4 , H 3 PO 4 , NH 4 F, Na 2 SO 4 solutions), organic (oxalic acid, glycerol, ethylene glycol (EG)), and mixed inorganic–organic electrolytes (H 2 SO 4 + EG + NH 4 F) at various operating voltages (typically ranging from 10 to 200 V). ,, The structure of anodic tantalum oxide (ATO) layers can vary from 0D to 3D, depending on the applied anodizing conditions, such as anodization voltage/current, anodization time, temperature, and pH of the electrolyte.…”

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

“…A switching layer with a thickness of 10 nm was fabricated using electrochemical anodization, and a high ON/OFF ratio was obtained. The device was low-cost and environmentally friendly and exhibited better RS performance with possible CMOS compatibility [ 188 ]. Zaffora et al also reported a Ta/Ta 2 O 5 /Pt-based RS device with the active switching layer fabricated using anodization in a borate buffer electrolyte.…”