Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Kundale, Somnath S.; Kamble, Girish U.; Patil, Pradnya P.; Patil, Snehal L.; Rokade, Kasturi A.; Khot, Atul C.; Nirmal, Kiran A.; Kamat, Rajanish K.; Kim, Kyeong Heon; An, Hongyu; Dongale, Tukaram D.; Kim, Tae Geun

doi:10.3390/nano13121879

Cited by 11 publications

(2 citation statements)

References 222 publications

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“…As one of the electrochemical fabrication techniques [45], anodization is a room temperature, non-vacuum technique with the advantages of low cost, convenience and largearea coating with uniform thickness [46][47][48][49][50]. The anodization requires only one voltage source, one electrolytic cell and two electrodes.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical anodic oxidation assisted fabrication of memristors

Hua,

Jin,

Guo

2024

Int. J. Extrem. Manuf.

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Owing to the advantages of simple structure, low power consumption and high-density integration, memristors or memristive devices are attracting increasing attention in the fields of next generation nonvolatile memories, neuromorphic computation and data encryption, etc. However, the deposition of memristive films often requires expensive equipment and strict vacuum conditions, the process consumes high energy, and it is also very time–consuming. In contrast, electrochemical anodizing can produce metal oxide films quickly (e.g. in 10 s) under ambient conditions. By means of the anodizing technique, oxide films, oxide nanotubes, nanowires and nanodots can be fabricated to prepare memristors. Through adjusting oxidation parameters such as voltage, current and time, oxide film thickness, nanostructures, defect concentrations, etc., can be varied to regulate device performances. Thus memristors fabricated by the anodic oxidation technique can achieve high device consistency, low variation, and ultra–high yield rate. This article provides a comprehensive review of the research progress in the field of anodic oxidation assisted fabrication of memristors. Firstly, the principle of anodic oxidation is introduced; then different types of memristors produced by the anodic oxidation are presented; finally, features and challenges of the anodic oxidation for memristor production are elaborated.

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Section: Introductionmentioning

confidence: 99%

Electrochemical anodic oxidation assisted fabrication of memristors

Hua,

Jin,

Guo

2024

Int. J. Extrem. Manuf.

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“…Recently, the reported anodic memristors studies increased in number, suggesting an increased scientific interest [3]. The oxide, which is the active material within a metalinsulator-metal (MIM) structure, is produced by anodization, where the metallic bottom electrode is the anode [4,5]. Anodization is a rather straightforward process that is not very energy intensive and does not require an ultra-high vacuum, which is beneficial for the ease of the production process.…”

Section: Introductionmentioning

confidence: 99%

Electrolyte Influence on Properties of Ultra-Thin Anodic Memristors on Titanium

Knapic,

Atanasova,

Zrinski

et al. 2024

Coatings

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Titanium anodic memristors were prepared in phosphate buffer (PB) and citrate buffer (CB) electrolytes. Studying their I-U sweeps, the memristors presented self-rectifying and volatile behaviors. Transmission electron microscopic analysis revealed crystalline protrusions inside a semi-crystalline Ti oxide. Grounded in this, a hybrid interfacial memristive switching mechanism relaying on partial filaments was proposed. Moreover, both analyzed memristor types demonstrated multilevel switching capabilities. The memristors anodized in the PB and CB showed high-to-low resistance ratios of 4 × 104 and 1.6 × 102, respectively. The observed (more than two order of magnitude) ratio improvement of the PB memristors suggests their better performance, in spite of their modestly high resistive state instabilities, attributed to the thermal stress caused by consecutive switching. The endurance and retention of both the PB and CB memristors was measured over up to 106 cycles, indicating very good lifetimes. Phosphate incorporation into the anodic oxide was confirmed by photoelectron spectroscopy analysis and was related to the improved memristive behavior of the PB sample. The presence of phosphate inside the memristively active layer modifies the availability of free O species (vacancies and ions) in the oxide. Taking all this into consideration, Ti anodic memristors anodized in PB are emphasized as candidates for neuromorphic computing.

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A reliable non‐volatile in‐memory computing associative memory based on spintronic neurons and synapses

Rezaei,

Amirany,

Moaiyeri

et al. 2024

Engineering Reports

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This article introduces an innovative non‐volatile associative memory (AM) that leverages spintronic synapses, employing magnetic tunnel junctions (MTJ) in conjunction with neurons constructed using carbon nanotube field‐effect transistors (CNTFETs). Our proposed design represents a significant advancement in area optimization and outperforms prior designs. We adopt MTJ‐based spintronic devices due to their remarkable attributes, including dependable reconfigurability and nonvolatility. Simultaneously, CNTFETs effectively address the longstanding limitations traditionally associated with MOSFETs. In this work, our proposed design undergoes rigorous simulations that account for process variations. The results demonstrate that our AM system closely approximates its ideal mathematical model, even with significant process variations. Furthermore, we investigate the impact of Tunnel Magnetoresistance (TMR) on the performance of our proposed AM system. Our investigations reveal that, even with a TMR as low as 100%, our design matches and often surpasses the performance of its counterparts operating with a TMR of 300%. This achievement holds profound significance from a fabrication standpoint, as fabricating MTJs with high TMR values can be intricate and costly. Overall, our novel AM system represents a significant breakthrough in emerging technologies, harnessing the unique strengths of spintronic synapses and advanced carbon nanotube transistors while robustly addressing challenges in performance and variability.

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Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Cited by 11 publications

References 222 publications

Electrochemical anodic oxidation assisted fabrication of memristors

Electrochemical anodic oxidation assisted fabrication of memristors

Electrolyte Influence on Properties of Ultra-Thin Anodic Memristors on Titanium

A reliable non‐volatile in‐memory computing associative memory based on spintronic neurons and synapses

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