Solution-processed inorganic copper(<scp>i</scp>) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes

Ding, Tao; Wang, Ning; Wang, Chen; Wu, Xinghua; Liu, Wenbo; Zhang, Qichun; Fan, Weijun; Sun, Xiao Wei

doi:10.1039/c7ra03433d

Cited by 27 publications

(27 citation statements)

References 37 publications

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“…Previously, Sun and co-workers reported a CuSCN-based QLED with vacuum-deposited electron transport layer (TPBi), which presented a maximum external quantum efficiency (EQE) of 6.9 %. 6 In our work, as an allsolution-processed device, the peak EQE is significantly improved to 12.4%. The current efficiency of the device reaches a maximum of 13.1 cd/A at a voltage of around 2.7 V. The brightness achieves over 60000 cd/m2 at a voltage of 8 V. More importantly, the turn-on voltage of the QLED with CuSCN injection layer is as low as 2.2 V, which is lower than those of PEDOT-based device and previous CuSCN-HIL device with thermally evaporated TPBi transport layer.…”

Section: Resultsmentioning

confidence: 61%

“…[1][2][3] As a hole injection layer (HIL), poly (3,4ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) is one of the most widely used materials. [4][5][6] The conductivity of PEDOT:PSS film is closely associated with the acid treatments, which will cause the degradation of the underlying transparent indium tin oxide (ITO) electrode. Moreover, PEDOT:PSS is processed in an aqueous solution and the material itself is highly hygroscopic, 7,8 while other functional organic layers of QLED device need to be prepared in an oxygen-and water-free glove box.…”

Section: Background and Objectivesmentioning

confidence: 99%

“…Alternatively, p-type inorganic copper(I) thiocyanate (CuSCN), processible for solution method, has a higher hole mobility of 0.01-0.1 cm 2 V -1 s -1 and a deeper valence band of about 5.5 eV compared with PEDOT:PSS. 6,9 Herein, we report all-solution-processed high-efficiency QLED devices employing an inorganic CuSCN as hole injection layer. By optimizing the multilayer structure and balancing the carrier injection, the resulting all-solution-processed devices have maximum current efficiency and EQE of 13.1 cd/A and 12.4% for red QLEDs.…”

Section: Background and Objectivesmentioning

confidence: 99%

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P‐118: Efficient Quantum Dots Light‐Emitting Diodes with a thiocyanate hole injection layer

Zhu

Lin

et al. 2019

Symp Digest of Tech Papers

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Section: Resultsmentioning

confidence: 61%

Section: Background and Objectivesmentioning

confidence: 99%

Section: Background and Objectivesmentioning

confidence: 99%

See 1 more Smart Citation

P‐118: Efficient Quantum Dots Light‐Emitting Diodes with a thiocyanate hole injection layer

Zhu

Lin

et al. 2019

Symp Digest of Tech Papers

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“…a) Device structure, b) energy band diagram (the energy levels for PEDOT:PSS, PVK, perovskite, and TPBI are taken from references), and c) EL spectra of PeLEDs. The photograph in (c) shows a working device with 4 min moisture‐treated films (with an emitting area of 2 mm × 2 mm at an applied voltage of 5 V).…”

Section: Pl Lifetime and Qy Of The As‐prepared Mapbbr3 Films Exposed mentioning

confidence: 99%

Fast Postmoisture Treatment of Luminescent Perovskite Films for Efficient Light‐Emitting Diodes

Wang

Yuan

et al. 2018

Small

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Despite the recent advances in the performance of perovskite light-emitting diodes (PeLEDs), the effects of water on the perovskite emissive layer and its electroluminescence are still unclear, even though it has been previously demonstrated that moisture has a significant impact on the quality of perovskite films in the fabrication process of perovskite solar cells and is a prerequisite for obtaining high-performance PeLEDs. Here, the effects of postmoisture on the luminescent CH NH PbBr (MAPbBr ) perovskite films are systematically investigated. It is found that postmoisture treatment can efficiently control the morphology and growth of perovskite films and only a fast moisture exposure at a 60% high relative humidity results in significantly improved crystallinity, carrier lifetime, and photoluminescence quantum yield of perovskite films. With the optimized moisture-treated perovskite films, a high-performance PeLED is fabricated, exhibiting a maximum current efficiency of 20.4 cd A , which is an almost 20-fold enhancement when compared with perovskite films without moisture treatment. The results provide valuable insights into the moisture-assisted growth of luminescent perovskite films and will aid in the development of high-performance perovskite light-emitting devices.

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“…Copper(I) thiocyanate (CuSCN) is an inorganic, wide bandgap (>3.4 eV), p‐type semiconductor with promising physical characteristics ( Figure a) . It is inexpensive, solution processable, and has been employed in several device types including TFTs, OLEDs, OPVs, and PSCs . We previously reported a novel deposition route for CuSCN using aqueous ammonia as the solvent .…”

Section: Introductionmentioning

confidence: 99%

p‐Doping of Copper(I) Thiocyanate (CuSCN) Hole‐Transport Layers for High‐Performance Transistors and Organic Solar Cells

Wijeyasinghe

Eisner

Tsetseris

et al. 2018

Adv Funct Materials

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The ability to tune the electronic properties of soluble wide bandgap semiconductors is crucial for their successful implementation as carrier-selective interlayers in large area opto/electronics. Herein the simple, economical, and effective p-doping of one of the most promising transparent semiconductors, copper(I) thiocyanate (CuSCN), using C 60 F 48 is reported. Theoretical calculations combined with experimental measurements are used to elucidate the electronic band structure and density of states of the constituent materials and their blends. Obtained results reveal that although the bandgap (3.85 eV) and valence band maximum (−5.4 eV) of CuSCN remain unaffected, its Fermi energy shifts toward the valence band edge upon C 60 F 48 addition-an observation consistent with p-type doping. Transistor measurements confirm the p-doping effect while revealing a tenfold increase in the channel's hole mobility (up to 0.18 cm 2 V −1 s −1 ), accompanied by a dramatic improvement in the transistor's bias-stress stability. Application of CuSCN:C 60 F 48 as the hole-transport layer (HTL) in organic photovoltaics yields devices with higher power conversion efficiency, improved fill factor, higher shunt resistance, and lower series resistance and dark current, as compared to control devices based on pristine CuSCN or commercially available HTLs.

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Solution-processed inorganic copper(i) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes

Abstract: The introduction of CuSCN as the hole injection material significantly improved the turn-on voltage of quantum dot-based LEDs.

Cited by 27 publications

References 37 publications

P‐118: Efficient Quantum Dots Light‐Emitting Diodes with a thiocyanate hole injection layer

P‐118: Efficient Quantum Dots Light‐Emitting Diodes with a thiocyanate hole injection layer

Fast Postmoisture Treatment of Luminescent Perovskite Films for Efficient Light‐Emitting Diodes

p‐Doping of Copper(I) Thiocyanate (CuSCN) Hole‐Transport Layers for High‐Performance Transistors and Organic Solar Cells

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