Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

Abstract

In this paper, an infrared annealing method was proposed for solution-processed indium gallium zinc oxide films. The optimized IGZO thin-film transistors (TFTs) exhibited a field-effect mobility of 2.04 cm 2 (Vs) -1 , on-off current ratio of 1.52 × 10 6 and subthreshold swing of 0.84 V/dec. Spectroscopic analysis confirmed that the infrared irradiation could enhance the removal of organic species and dehydroxylation. The results suggest that infrared annealing method is a potential process for low-temperature preparation of solution-processed oxide semiconductor layers and dielectric layers, and can be applied to the fabrication of TFT devices.

Low-Impurity High-Performance Solution-Processed Metal Oxide Semiconductors via a Facile Redox Reaction

“…Low thermal budget processes provide external energy such as ultraviolet irradiation, [8][9] microwave annealing, 10 infrared exposure, 11 and high-pressure annealing to reduce the thermal budget. [12][13][14] In the new chemical approaches, ligands and counter ions are carefully designed to reduce the activation energy and lower the thermal budget, as in alkoxide systems, 15 combustible processes, 8,[16][17] and aqueous routes [18][19][20][21] .…”

Design, Properties, and TFT Application of Solution‐Processed In‐Ga‐Cd‐O Thin Films

“…The second exothermic peak at 335 °C can be explained by the formation of the nanocrystalline InGaCdO. Two exothermic peaks were also observed at the temperatures of 194 and 330 °C for the In‐Ga‐Zn‐O (In:Ga:Zn = 1:1:1) precursor (Figure b), which are considered to be due to the formation of amorphous or nanocrystalline IGZO film, respectively . This indicates that a small change is reflected in the thermal‐driven condensation processes substituting Zn with Cd.…”

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

“…With a rapid development of oxide semiconductors since Hosono's frontier works, 1,2 the current trend of TFT application is to employ amorphous oxide semiconductors (AOSs) instead of widely used hydrogenated amorphous silicon (a-Si:H) as the active channel layer for next generation FPDs with high resolution (at least 2k  4k), fast frame rate (>120 Hz), and large panel size, which require the TFTs have carrier mobility larger than 3 cm 2 /Vs. 3,4 So far, many indium oxide (InOx-) based AOSs such as In-O, 5 In-Ga-O, 6 In-Si-O, 7,8 In-Sn-O, 9 In-W-O, 7,10,11 In-Zn-O, 12 and multi-component In-Ga-Zn-O, 2, [13][14][15] In-Hf-Zn-O, 16 In-Sc-Zn-O, 17 In-Si-Zn-O, 18 In-Sn-Zn-O, 19 In-W-Zn-O, 20 In-Zr-Zn-O, 21 etc., have been studied as the channel layers of TFTs because of their high electron mobilities. 4,22 Amongst, the amorphous In-Ga-Zn-O (a-IGZO) has been received particular attention and been used to demonstrate large-size high-definition prototype FPDs.…”