Solution-Processed C<sub>60</sub>Single-Crystal Field-Effect Transistors

Kang, Woogun; Kitamura, M.; Itoh, Tetsuji; Arakawa, Yasuhiko

doi:10.7567/jjap.51.11pd06

Cited by 3 publications

(3 citation statements)

References 29 publications

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“…For example, by simply changing the solvents, the shapes of the crystals were varied from irregular polyhedra, 30,31 rods, [30][31][32][33][34] tubes, 33 and whiskers to disks. 27,31,[35][36][37] The crystal shapes were shown to be associated with the geometry of the solvents used. 31 We, therefore, used a solution growth method and controlled the growth parameters in terms of crystal alignment, shape, and dimensions to accommodate FET fabrication and obtained ribbon-like single-crystals of C 60 with an electron mobility as high as 2.0 AE 0.61 cm 2 V À1 s À1 .…”

Section: Introductionmentioning

confidence: 99%

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Solution-grown aligned C60 single-crystals for field-effect transistors

Fan

Vosgueritchian

et al. 2014

J. Mater. Chem. C

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Section: Introductionmentioning

confidence: 99%

“…26 Only very recently, electron mobilities above 1 cm 2 V À1 s À1 and even above 10 cm 2 V À1 s À1 were achieved from solution-grown C 60 (ref. 27) and solvated C 60 (ref. 28) single crystals.…”

Section: Introductionmentioning

confidence: 99%

Solution-grown aligned C60 single-crystals for field-effect transistors

Fan

Vosgueritchian

et al. 2014

J. Mater. Chem. C

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“…In this way, the trap carrier density of the 1D C 60 crystal array is estimated to be as low as 3.31 × 10 −9 C cm −2 , which is 7-136 times lower than that of the C 60 crystals prepared by previously reported methods (Figure 4f and Table S1, Supporting Information). [11][12][13][14]20,[46][47][48][49][50][51][52] The excellent device performance of the OFET device could be attributed to the high crystal quality of 1D C 60 single crystal and the optimized device structure with good electrical contacts. Next, the performance uniformity of 55 C 60 crystal array-based devices on the same substrate was investigated.…”

Section: Resultsmentioning

confidence: 99%

Wafer‐Scale Growth of Aligned C₆₀ Single Crystals via Solution‐Phase Epitaxy for High‐Performance Transistors

Zhang

Deng

Fang

et al. 2021

Adv Funct Materials

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Fullerene (C 60 ) single crystals with exceptionally low defects and nearly perfect translational symmetry make them appealing in achieving high-performance n-type organic transistors. However, because of its natural 0D structure, control over continuous crystallization of C 60 over a large area is extremely challenging. Here, the authors report a solution-phase epitaxial approach for wafer-scale growth of continuously aligned C 60 single crystals. This method enables the rational control of the density of nucleation event at meniscus front by confining the size and shape of meniscus with a microchannel template. In this case, a single nucleus as seed crystal can be formed at the front of meniscus, and then epitaxial growth from the seed crystal occurs with continuous retreat of the meniscus. As a result, highly uniform C 60 singlecrystal array with ultralow defect density is obtained on 2-inch substrate. Organic field-effect transistors made from the C 60 single-crystal array show a high average electron mobility of 2.17 cm 2 V −1 s −1 , along with a maximum mobility of 5.09 cm 2 V −1 s −1 , which is much superior to the C 60 polycrystalline film-based devices. This strategy opens new opportunities for the scalable fabrication of high-performance integrated devices based on organic crystals.

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Comparative Study of the N‐Type Doping Efficiency in Solution‐processed Fullerenes and Fullerene Derivatives

Rossbauer

Müller

Anthopoulos

2014

Adv Funct Materials

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Molecular doping of organic semiconductors and devices represents an enabling technology for a range of emerging optoelectronic applications. Although p‐type doping has been demonstrated in a number of organic semiconductors, efficient n‐type doping has proven to be particularly challenging. Here, n‐type doping of solution‐processed C60, C70, [60]PCBM, [70]PCBM and indene‐C60 bis‐adduct by 1H‐benzimidazole (N‐DMBI) is reported. The doping efficiency for each system is assessed using field‐effect measurements performed under inert atmosphere at room temperature in combination with optical absorption spectroscopy and atomic force microscopy. The highest doping efficiency is observed for C60 and C70 and electron mobilities up to ≈2 cm2/Vs are obtained. Unlike in substituted fullerenes‐based transistors where the electron mobility is found to be inversely proportional to N‐DMBI concentration, C60 and C70 devices exhibit a characteristic mobility increase by approximately an order of magnitude with increasing dopant concentration up to 1 mol%. Doping also appears to significantly affect the bias stability of the transistors. The work contributes towards understanding of the molecular doping mechanism in fullerene‐based semiconductors and outlines a simple and highly efficient approach that enables significant improvement in device performance through facile chemical doping.

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Solution-Processed C₆₀Single-Crystal Field-Effect Transistors

Cited by 3 publications

References 29 publications

Solution-grown aligned C60 single-crystals for field-effect transistors

Solution-grown aligned C60 single-crystals for field-effect transistors

Wafer‐Scale Growth of Aligned C₆₀ Single Crystals via Solution‐Phase Epitaxy for High‐Performance Transistors

Comparative Study of the N‐Type Doping Efficiency in Solution‐processed Fullerenes and Fullerene Derivatives

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Solution-Processed C60Single-Crystal Field-Effect Transistors

Cited by 3 publications

References 29 publications

Solution-grown aligned C60 single-crystals for field-effect transistors

Solution-grown aligned C60 single-crystals for field-effect transistors

Wafer‐Scale Growth of Aligned C60 Single Crystals via Solution‐Phase Epitaxy for High‐Performance Transistors

Comparative Study of the N‐Type Doping Efficiency in Solution‐processed Fullerenes and Fullerene Derivatives

Contact Info

Product

Resources

About

Solution-Processed C₆₀Single-Crystal Field-Effect Transistors

Wafer‐Scale Growth of Aligned C₆₀ Single Crystals via Solution‐Phase Epitaxy for High‐Performance Transistors