Photosynaptic organic field‐effect transistors (OFETs) represent a viable pathway to develop bionic optoelectronics. However, the high operating voltage and current of traditional photosynaptic OFETs lead to huge energy consumption greater than that of the real biological synapses, hindering their further development in new‐generation visual prosthetics and artificial perception systems. Here, a fully solution‐printed photosynaptic OFET (FSP‐OFET) with substantial energy consumption reduction is reported, where a source Schottky barrier is introduced to regulate charge‐carrier injection, and which operates with a fundamentally different mechanism from traditional devices. The FSP‐OFET not only significantly lowers the working voltage and current but also provides extraordinary neuromorphic light‐perception capabilities. Consequently, the FSP‐OFET successfully emulates visual nervous responses to external light stimuli with ultralow energy consumption of 0.07–34 fJ per spike in short‐term plasticity and 0.41–19.87 fJ per spike in long‐term plasticity, both approaching the energy efficiency of biological synapses (1–100 fJ). Moreover, an artificial optic‐neural network made from an 8 × 8 FSP‐OFET array on a flexible substrate shows excellent image recognition and reinforcement abilities at a low energy cost. The designed FSP‐OFET offers an opportunity to realize photonic neuromorphic functionality with extremely low energy consumption dissipation.
Liquid crystalline (LC) organic semiconductors having long-range-ordered LC phases hold great application potential in organic field-effect transistors (OFETs). However, to meet real device application requirements, it is a prerequisite to precisely pattern the LC film at desired positions. Here, a facile method that combines the technique of inkjet printing and melt processing to fabricate patterned LC film for achieving high-performance organic integrated circuits is demonstrated. Inkjet printing controls the deposition locations of the LC materials, while the melt processing implements phase transition of the LC materials to form high-quality LC films with large grain sizes. This approach enables to achieve patterned growth of high-quality 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C 8 -BTBT) LC films. The patterned C 8 -BTBT LC film-based 7 × 7 OFET array has 100% die yield and shows high average mobility of 6.31 cm 2 V −1 s −1 , along with maximum mobility up to 9.33 cm 2 V −1 s −1 . As a result, the inverters based on the patterned LC films reach a high gain up to 23.75 as well as an ultrahigh noise margin over 81.3%. Given the good generality of the patterning process and the high quality of the resulting films, the proposed method paves the way for high-performance organic integrated devices.
SnO2/Al2O3 supports with different SnO2 loadings were prepared by using a deposition–precipitation method and characterized by using N2 and CO adsorption–desorption, XRD, H2 temperature‐programmed reduction, and X‐ray photoelectron spectroscopy techniques. SnO2 dispersed finely on the Al2O3 surface with a capacity of 0.172 mmol 100 m−2, which equals 6.4 % SnO2 loading. Below this loading, no crystalline SnO2 can be detected owing to the formation of the sub‐monolayer‐ or monolayer‐dispersed SnO2 phase. Crystalline SnO2 can be observed only if the SnO2 loading reaches 9 %. With use of these SnO2/Al2O3 supports, all prepared Pd/SnO2/Al2O3 catalysts demonstrate increased activity compared to Pd/SnO2 and Pd/Al2O3 owing to the presence of more active oxygen species on SnO2/Al2O3 supports as well as their higher surface areas, which improve Pd dispersion. This result indicates that with SnO2/Al2O3 supports, less amount of Pd can be used to obtain catalysts with competitive performance.
A uniform and smooth Dif-TES-ADT film with thickness of ∼4.62 nm is achieved within 50 s in 2-inch size through the use of a mixed solvent system. The ultrathin Dif-TES-ADT film-based transistors exhibit a maximum mobility up to 5.54 cm2 V−1 s−1.
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