Solution processable organic/inorganic hybrid ultraviolet photovoltaic detector

Guo, Xiaopeng; Tang, Libin; Xiang, Jinzhong; Ji, Rongbin; Zhang, Kai; Lai, Sin Ki; Zhao, Jun; Kong, Jincheng; Lau, Shu Ping

doi:10.1063/1.4952425

Cited by 15 publications

(14 citation statements)

References 18 publications

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“…The PFO/ZnO heterojunction may broaden the absorption band, absorbing more UV photons that is important for high sensitive device [133]. The unoptimized device showed a D * >3 × 10 10 cmHz at the room temperature [133]. The study paved the way for developing large array, high performance, high uniformity, light weight and low cost UV FPA detectors [133].…”

Section: I-v Characteristics Of Opv Devices With the Planar Zno And Thementioning

confidence: 96%

“…The unoptimized device showed a D * >3 × 10 10 cmHz at the room temperature [133]. The study paved the way for developing large array, high performance, high uniformity, light weight and low cost UV FPA detectors [133]. These UV FPA detectors have important applications in astronomical research, environmental monitoring, forest fire prevention, medical analysis, and missile approach warning [133].…”

Section: I-v Characteristics Of Opv Devices With the Planar Zno And Thementioning

confidence: 99%

“…Figure 18 shows the XRD patterns of the ZnO/ITO [132]. The organic/inorganic hybrid UV photovoltaic detector using the Polyfluorene (PFO)/ZnO heterojunction was developed and reported by Guo et al [133]. The device structure aluminum/PFO/ZnO/ITO had a smooth surface root mean square (RMS) roughness: 0.28 nm which is a key parameter for the large array, high uniformity UV focal plane array (FPA) detectors [133].…”

Section: I-v Characteristics Of Opv Devices With the Planar Zno And Thementioning

confidence: 99%

“…The organic/inorganic hybrid UV photovoltaic detector using the Polyfluorene (PFO)/ZnO heterojunction was developed and reported by Guo et al [133]. The device structure aluminum/PFO/ZnO/ITO had a smooth surface root mean square (RMS) roughness: 0.28 nm which is a key parameter for the large array, high uniformity UV focal plane array (FPA) detectors [133]. The PFO/ZnO heterojunction may broaden the absorption band, absorbing more UV photons that is important for high sensitive device [133].…”

Section: I-v Characteristics Of Opv Devices With the Planar Zno And Thementioning

confidence: 99%

“…The device structure aluminum/PFO/ZnO/ITO had a smooth surface root mean square (RMS) roughness: 0.28 nm which is a key parameter for the large array, high uniformity UV focal plane array (FPA) detectors [133]. The PFO/ZnO heterojunction may broaden the absorption band, absorbing more UV photons that is important for high sensitive device [133]. The unoptimized device showed a D * >3 × 10 10 cmHz at the room temperature [133].…”

Section: I-v Characteristics Of Opv Devices With the Planar Zno And Thementioning

confidence: 99%

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Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas¹

2018

NANO

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This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial interest in the research area of wide bandgap semiconductors due to their unique electrical, optical and structural properties. GaN and ZnO are important semiconductor materials with applications in blue and ultraviolet (UV) optoelectronics. Both materials have similar physical properties. GaN and ZnO as hybrid material have received much attention due to their unique potential applications. Several potential optical applications are being fabricated based on GaN and ZnO hybrid materials such as optical wave guide, light emitting diodes (LEDs), and laser diodes (LDs). The recent aspects of GaN and ZnO hybrid based devices are presented and discussed.

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Section: I-v Characteristics Of Opv Devices With the Planar Zno And Thementioning

confidence: 96%

Section: I-v Characteristics Of Opv Devices With the Planar Zno And Thementioning

confidence: 99%

Section: I-v Characteristics Of Opv Devices With the Planar Zno And Thementioning

confidence: 99%

Section: I-v Characteristics Of Opv Devices With the Planar Zno And Thementioning

confidence: 99%

Section: I-v Characteristics Of Opv Devices With the Planar Zno And Thementioning

confidence: 99%

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Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas¹

2018

NANO

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Low noise ultraviolet photodetector with over 100% enhanced lifetime based on polyfluorene copolymer and ZnO nanoparticles

Azadinia

Fathollahi

Ameri

et al. 2018

J of Applied Polymer Sci

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Stability and noise current of a hybrid UV photodetector with inverted planar heterojunction (PHJ) structure indium‐tin‐oxide/ZnO nanoparticles (NPs)/poly[9,9′‐dioctyl‐fluorene‐2,7‐diyl]‐copoly[diphenyl‐p‐tolyl‐amine‐4,4′‐diyl] (BFE)/Ag are investigated. ZnO NPs as the acceptor and BFE as the donor were deposited as the active layer. Under UV light illumination, light to dark current ratio of about 102 is observed at a very low bias voltage of −1.5 V. The spectral response of the device is located near UV region with a maximum responsivity of ∼57 mA/W at wavelength of 350 nm. In particular, the prepared device exhibits remarkably higher photoresponse (∼350%) and stability (∼115%) enhancement under ambient condition compared to the reference device. In addition, the presented results show that the noise current of our device with PHJ structure is about an order of magnitude lower than that of commonly used bulk heterojunction system. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2018, 135, 46533.

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