Ambipolar
semiconducting materials have great potential in complementary-like
organic logic circuits. Accessing such logic circuits demands balanced
hole and electron mobilities. However, the lack of ambipolar high-mobility
polymer semiconductors with balanced charge carrier-transporting properties
precludes the rapid development of organic logic circuits. In this
context, structural modification of semiconductor materials to enhance
the electron/hole transport is of great urgency. Herein, a multifunctionalization
strategy is used to achieve this goal. Combined electron-withdrawing
moieties involving fluorine and pyridinic nitrogen atoms can not only
reduce the frontier molecular orbital energies but also planarize
the polymer backbone, demonstrating synergetic effects on the control
over the carrier injection process at the metal–semiconductor
interface and microstructure-sensitive charge transport in the channel.
A balanced ambipolar behavior with electron/hole mobilities of 3.88/3.44
cm2 V–1 s–1 was observed,
and complementary-like inverters with high gains of greater than 200
were achieved. Microstructure and thin-film morphology were characterized
to further reveal the relationship between device performances and
macroscopic observables. This multifunctionalization strategy bodes
well for developing new ambipolar semiconducting materials.