The energy profile for rotation around the central Si−Si bonds of the tetrasilanes SiMe3SiX2SiX2SiMe3 (X=H, F, Cl, Br and I) were examined by ab initio calculations and temperature‐dependent Raman spectroscopy. Ethanelike intrinsic barriers to rotation were found for X=H, Cl, Br and I. MP2 calculations predict for SiMe3SiF2SiF2SiMe3 the existence of a gauche minimum with backbone dihedral angle ω≈64° and a twisted minimum with ω≈115°, as shown in the picture (solid line=HF, dashed line=MP2). The curious 115° local minium can be accounted for by a unique intrinsic barrier to rotation superimposed by electrostatic interactions involving strongly polar SiF bonds.