Solution growth of gallium phosphide p-n junctions by liquid phase epitaxy

Peaker, А. R.; Sudlow, P. D.; Mottram, Alexander D.

doi:10.1016/0022-0248(72)90536-2

Cited by 7 publications

(2 citation statements)

References 7 publications

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“…Deviation from the straight line at the high temperature region is probably due to the diffusion of zinc in the solid after growth levelling out the doping gradient. This is a very significant mechanism while the temperature of the melt is of the order of 1000~ as diffusion across the grown layer-substrate interface is occurring because of the concentration gradient [19]. The deviation of the plot from a straight line for the later stages of growth show the effect of zinc loss due to evaporation, thus depressing the carrier concentration below the expected value.…”

Section: P-type Materialsmentioning

confidence: 98%

Doping gradients in layers of gallium phosphide grown by liquid epitaxy

Sudlow¹,

Mottram²,

Peaker³

1972

J Mater Sci

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Layers of epitaxial gallium phosphide doped with either tellurium, sulphur or zinc over the range 10 '~ to 10 '8 cm-2 have been grown from gallium solution using a vertical dipping system. These layers of thickness 60 to 80 /~m have been produced on the (1 00) and (111)B faces of gallium phosphide single crystal substrates at high growth rates. Doping gradients have been investigated by a Schottky barrier technique over an angle lapped region of the grown slice, measuring the capacitance voltage characteristics of the individual barriers. Significant changes in doping level have been observed throughout the thickness of the layers and these are related to the variation of distribution coefficient, the losses of impurity from the system and the presence of competing background impurity systems.

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Section: P-type Materialsmentioning

confidence: 98%

Doping gradients in layers of gallium phosphide grown by liquid epitaxy

Sudlow¹,

Mottram²,

Peaker³

1972

J Mater Sci

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show abstract

“…It is realized that zinc diffusion takes place during the growth procedure such that a gradient is set up in the junction region, and when p > n the p-n junction will probably move away from the epitaxial interface (Peaker et al 1972). However, C-V measurements on the diodes have indicated that this graded region is small enough (< 0.1 pm) to be neglected in the diodes studied here and that abrupt junction conditions may be assumed.…”

Section: Injection Analysismentioning

confidence: 99%

Green electroluminescence in GaP diodes and its correlation with cathodoluminescence measurements

Wight

Birbeck

Trussler

et al. 1973

J. Phys. D: Appl. Phys.

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The results of a programme of research on green-emitting epitaxial diodes are reported. Diode quantum efficiencies of 0·07% DC and 0·40% pulsed have been obtained from an optimized structure. Room-temperature cathodoluminescence measurements on the bulk regions of device structures are correlated with diode performance. Major correlations are found in luminescence efficiency, light output characteristics and spectral distribution; the last is analysed in some detail to elucidate the room-temperature luminescence mechanisms. These results, coupled with the results of attempts to change the minority carrier injection ratio in the structure and the analysis of diode characteristics, have enabled the operation of our diodes to be understood in terms of abrupt junction theory.

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Epitaxy

Agajanian¹

1976

Semiconducting Devices

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Solution growth of gallium phosphide p-n junctions by liquid phase epitaxy

Cited by 7 publications

References 7 publications

Doping gradients in layers of gallium phosphide grown by liquid epitaxy

Doping gradients in layers of gallium phosphide grown by liquid epitaxy

Green electroluminescence in GaP diodes and its correlation with cathodoluminescence measurements

Epitaxy

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