Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors

Abstract

Sodium beta-alumina (SBA) has high two-dimensional conductivity, owing to mobile sodium ions in lattice planes, between which are insulating AlO(x) layers. SBA can provide high capacitance perpendicular to the planes, while causing negligible leakage current owing to the lack of electron carriers and limited mobility of sodium ions through the aluminium oxide layers. Here, we describe sol-gel-beta-alumina films as transistor gate dielectrics with solution-deposited zinc-oxide-based semiconductors and indium tin oxide (ITO) gate electrodes. The transistors operate in air with a few volts input. The highest electron mobility, 28.0 cm2 V(-1) s(-1), was from zinc tin oxide (ZTO), with an on/off ratio of 2 x 10(4). ZTO over a lower-temperature, amorphous dielectric, had a mobility of 10 cm2 V(-1) s(-1). We also used silicon wafer and flexible polyimide-aluminium foil substrates for solution-processed n-type oxide and organic transistors. Using poly(3,4-ethylenedioxythiophene) poly(styrenesulphonate) conducting polymer electrodes, we prepared an all-solution-processed, low-voltage transparent oxide transistor on an ITO glass substrate.

Air‐Operable, High‐Mobility Organic Transistors with Semifluorinated Side Chains and Unsubstituted Naphthalenetetracarboxylic Diimide Cores: High Mobility and Environmental and Bias Stress Stability from the Perfluorooctylpropyl Side Chain

“…Now that the mobility of organic semiconductors is regularly exceeding 0.5 cm 2 V −1 s −1 , the typical mobility of amorphous silicon (a-Si) TFTs, [ 8 ] some researchers [ 9 ] are pointing out some critical obstacles to practical applications of OTFTs, such as high power requirements, lower gain, lower switching speeds and reliability problems compared to conventional Sibased technology. In response, some remarkable achievements in dielectric layers [10][11][12][13][14] and the lower-voltage-operating OTFTs and power circuits were demonstrated. [ 15 ] Recently, the high gain of ca.…”

High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

“…Low voltage operated TFTs with good performance have been reported using solution-processed gate dielectrics such as zirconium oxide 13 and sodium beta-alumina. 19 However, the processing temperature of typical dielectric layers is very high in these cases (>500 C), which is not suitable to be used for practical display applications.…”

Light-Emitting Electrochemical Transistors

“…Two common approaches to increase this parameter are utilization of a high-k dielectric and use of an ultrathin dielectric (89). Alternatively, the electrolyte gated organic field-effect transistor (EGOFET) employs a solid electrolyte as gate insulator (90)(91)(92)(93)(94)(95)(96), because of the large capacitance of this material.…”