The production of high-performance solution-processed semiconductor films represents a key materials challenge, potentially enabling a wide range of applications (e.g., low-cost and flexible transistors, solar cells, and detectors).[1±8] While most work in this area has focused on organic semiconductors, [1±3] we recently demonstrated a solution-processing technique for the deposition of ultrathin high-mobility SnS 2±x Se x films using hydrazine as solvent.[6] The hydrazinium-precursor process employs excess chalcogen (S or Se) to directly improve the solubility and film-formation properties of main-groupmetal chalcogenides in hydrazine [6] or hydrazine/water mixtures.[8] The resulting hydrazine-based solutions are spin-coated onto substrates, leaving behind a hydrazinium-precursor film that can be cleanly decomposed to the targeted metalchalcogenide semiconductor at moderately low temperatures (< 300 C). Thin-film transistors (TFTs) based on the resulting SnS 2±x Se x films have yielded mobilities of~10 cm 2 V ±1 s ±1 , [6] approximately an order-of-magnitude higher than previous results for high-throughput solution-processed semiconductors. The higher mobilities translate to potential for extending the application range for solution-processed films to higher-speed devices than those currently envisioned for analogous organicbased systems. Despite the promising device characteristics, several materials and device issues limit the prospective application of the new approach for commercial device fabrication. [6,8,9] Primary among these issues is the use during spin-coating of the solvent hydrazineÐa highly toxic and explosive material.[10] Additionally, the reported devices operate at high voltages (i.e., 85 V), well outside the range of most consumer electronics applications. A reduction in operating voltage would not only enable compatibility with current application standards, but also reduce power demands and potentially extend device lifetimes. Finally, the new solution-based technique has only been demonstrated with one set of materials (i.e., SnS 2±x Se x ). For envisioned use in a wide range of potential applications, demonstration of other chalcogenide films using the hydrazinium-precursor approach is desirable.The present study addresses the above issues by targeting In 2 Se 3 as a semiconductor for deposition. Indium(III) selenide has demonstrated promise for use in photovoltaic devices, [11,12]