Solubility of nitrogen in alpha vanadium from 600° to 1200°C

Henry, Jack L.; O'Hare, S.A.; McCune, R. A.; Krug, Marion P.

doi:10.1016/0022-5088(71)90063-4

Cited by 30 publications

(3 citation statements)

References 4 publications

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“…These N contents are in agreement with the N concentration range from 0 to 7 at% reported for the a-V(N) solid solution [3,4]. The b-V 2 N reflexes show up weakly at 650 C (the (002) reflex can be unambiguously observed in Fig.…”

Section: Resultssupporting

confidence: 90%

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Formation of Transition Metal Nitrides by Rapid Thermal Processing (RTP)

Galesic¹,

Angelkort²,

Lewalter³

et al. 2000

phys. stat. sol. (a)

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Section: Resultssupporting

confidence: 90%

“…Henry et al [4] found an almost linear correlation between the lattice parameter a 0 and the N content in the solid solution given by…”

Section: Resultsmentioning

confidence: 99%

Formation of Transition Metal Nitrides by Rapid Thermal Processing (RTP)

Galesic¹,

Angelkort²,

Lewalter³

et al. 2000

phys. stat. sol. (a)

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“…The reason for this lattice expansion is presumably N insertion in the V 5 Al 8 lattice. We compared the 0.2% expansion of V 5 Al 8 with the lattice expansion in α-V(N), with the help of the lattice-parameter-N correlation function given by Henry [25] (cN=(a-3.0261 Å)×257.94) and obtained a value of 1.7% N incorporation in V 5 Al 8 . The SNMS depth profile confirmed the presence of a small amount of N in the middle of the layer.…”

Section: Methodsmentioning

confidence: 99%

Formation and nitridation of vanadium-aluminum intermetallic compounds

Lewalter

Böck

Kolbesen

2002

Analytical and Bioanalytical Chemistry

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V(5)Al(8) and V(3)Al intermetallics have been formed by interdiffusion, by annealing of sputtered V/Al-multilayers at 700 degrees C in vacuo; sapphire (102) was used as substrate. The V/Al intermetallics were nitridated in NH(3) at 900 degrees C for 1 min by RTP (rapid thermal processing). The samples were investigated with XRD (X-ray diffraction), SNMS (secondary neutral mass spectrometry), and AFM (atomic force microscopy). A 5-10 nm thick AlN film (001 textured) was formed by nitridation of V(5)Al(8) (110 textured) and 2-3% nitrogen was incorporated in the V(5)Al(8) bulk. Nitridation of V(3)Al resulted in the formation of VN and AlN. Direct nitridation of V/Al-multilayers showed that near the surface nitridation is faster than intermixing of the V and Al layers. The capability of VN as diffusion barrier for Al could also be shown.

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Domain structures associated with the twinned phases V8N and V4N

Nouet

Vicens

Delavignette³

1980

Phys. Stat. Sol. (a)

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The system V–N is investigated by X‐rays, electron diffraction, and electron microscopy in the composition range 0 up to 25 at% N. The solid solubility of nitrogen is determined in the temperature range 500 up to 1200 °C. Two phases are formed upon quenching. The first is the V8N tetragonal phase. A supercell of the vanadium cell is proposed (a = b = 2ao √2, c = co). The transformation b.c.c. → b.c.t. gives rise to a particular twinned configuration. The domains are related by a reflection twin (101)t, taking into account a supplementary rotation due to the tetragonal deformation. A new pseudo‐orthorhombic phase V4N is analysed. This phase is isomorphous to Ta4N. The domain structure is described using a reflection twin (110)o and a rotation twin (130)o.

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Solubility of nitrogen in alpha vanadium from 600° to 1200°C

Cited by 30 publications

References 4 publications

Formation of Transition Metal Nitrides by Rapid Thermal Processing (RTP)

Formation of Transition Metal Nitrides by Rapid Thermal Processing (RTP)

Formation and nitridation of vanadium-aluminum intermetallic compounds

Domain structures associated with the twinned phases V8N and V4N

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