Solitons in geometric potentials

Kartashov, Yaroslav V.; Szameit, Alexander; Keil, Robert; Vysloukh, Victor A.; Torner, Lluís

doi:10.1364/ol.36.003470

Cited by 8 publications

(9 citation statements)

References 11 publications

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“…The obtained values were inserted in Eqs. (13) and (12) to find the electron concentrations ) (m r n and ) (b r n . Table 2 presents the solutions of a system Eqs.…”

Section: Electron Concentration and Fermi Energymentioning

confidence: 99%

“…However, a 3D approach to modulation doping was introduced in [8] to improve the thermoelelectric characteristics of nanocomposites [9,10]. The influence of periodic structures on electronic properties has been studied in related geometries, such as periodic curved surfaces [11,12], nanotubes [13], cylindrical surfaces with nonconstant diameter [14], and strain-driven nanostructures [15].…”

Section: Introductionmentioning

confidence: 99%

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Geometry-induced electron doping in periodic semiconductor nanostructures

Tavkhelidze

2014

Physica E: Low-dimensional Systems and Nanostructures

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Recently, new quantum features have been observed and studied in the area of nanostructured layers. Nanograting on the surface of the thin layer imposes additional boundary conditions on the electron wave function and induces G-doping or geometry doping. Gdoping is equivalent to donor doping from the point of view of the increase in electron concentration n. However, there are no ionized impurities. This preserves charge carrier scattering to the intrinsic semiconductor level and increases carrier mobility with respect to the donor-doped layer. G-doping involves electron confinement to the nanograting layer. Here, we investigate the system of multiple nanograting layers forming a series of hetero-or homojunctions. The system includes main and barrier layers. In the case of heterojunctions, both types of layers were G-doped. In the case of homojunctions, main layers were G-doped and barrier layers were donor-doped. In such systems, the dependence of n on layer geometry and material parameters was analysed. Si and GaAs homojunctions and GaAs/AlGaAs, Si/SiGe, GaInP/AlGAs, and InP/InAlAs heterojunctions were studied. G-doping levels of 10 18 -10 19 cm -3 were obtained in homojunctions and type II heterojunctions. High G-doping levels were attained only when the difference between band gap values was low.

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“…The obtained values were inserted in Eqs. (13) and (12) to find the electron concentrations ) (m r n and ) (b r n . Table 2 presents the solutions of a system Eqs.…”

Section: Electron Concentration and Fermi Energymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Geometry-induced electron doping in periodic semiconductor nanostructures

Tavkhelidze

2014

Physica E: Low-dimensional Systems and Nanostructures

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“…Here, we concentrate on experimental study of geometry‐induced doping (G‐doping) . Related quantum systems have also been investigated . The NG geometry belongs to a wide class of nonintegrable quantum systems .…”

Section: Introductionmentioning

confidence: 99%

Geometry‐induced quantum effects in periodic nanostructures

Tavkhelidze

Jangidze

Mebonia

et al. 2017

Physica Status Solidi (a)

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Recently, geometry-induced quantum effects in periodic nanostructures were introduced and observed. Nanograting has been shown to dramatically improve thermoelectric and electron emission properties, and originate a geometry induced doping or G-doping. Here, we concentrate on experimental investigation of G-doping. We fabricate nanograting (NG) layers and measure their electron transport properties. The grating was fabricated on the surface of a silicon on insulator (SOI) wafer device layer using laser interference lithography followed by reactive ion etching. Next, large square islands were shaped in the device layer.The characteristics of NG and plain islands were compared to investigate G-doping. Resistivity temperature dependences were recorded in the range of 4-300 K. For all 21 samples, the NG layers show a 2-3 order of magnitude reduction in resistivity with respect to the plain layer. Hall coefficient and thermopower measurements demonstrate that the NG layers are n-type. Obtained G-doping level corresponded to an "effective impurity" concentration of 10 18 cm À3 . The dependence of the resistivity and Hall coefficient on temperature and magnetic field were recorded in the ranges of 2-300 K and 0-3 T, respectively.

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“…Quantum waveguide models arise in the description of electrons in nanowires (cf. [1] and references therein) or guided on a chip [2], neutrons propagating along fibers [3,4], and undulated optical slab waveguides [5,6], but on a more abstract level can also provide insights into the dynamics of chemical (see, e.g., [7,8]) or nuclear [9] reactions. Experiments dedicated to the investigation of quantum waveguide systems include magnetoresistance measurements [10] that have been interpreted as indications of resonances due to bound states in the curved quantum wire [11] and studies of microwave resonators simulating the Schrödinger equation [9,[12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Nonadiabatic couplings and gauge-theoretical structure of curved quantum waveguides

Stockhofe

Schmelcher

2014

Phys. Rev. A

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We investigate the quantum mechanics of a single particle constrained to move along an arbitrary smooth reference curve by a confinement that is allowed to vary along the waveguide. The Schrödinger equation is evaluated in the adapted coordinate frame and a transverse-mode decomposition is performed, taking into account both curvature and torsion effects and the possibility of a cross-section potential that changes along the curve in an arbitrary way. We discuss the adiabatic structure of the problem, and examine nonadiabatic couplings that arise due to the curved geometry, the varying transverse profile, and their interplay. The exact multimode matrix Hamiltonian is taken as the natural starting point for few-mode approximations. Such approximate equations are provided, and it is worked out how these recover known results for twisting waveguides and can be applied to other types of waveguide designs. The quantum waveguide Hamiltonian is recast into a form that clearly illustrates how it generalizes the Born-Oppenheimer Hamiltonian encountered in molecular physics. In analogy to the latter, we explore the local gauge structure inherent to the quantum waveguide problem and suggest the usefulness of diabatic states, giving an explicit construction of the adiabatic-to-diabatic basis transformation.

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Solitons in geometric potentials

Cited by 8 publications

References 11 publications

Geometry-induced electron doping in periodic semiconductor nanostructures

Geometry-induced electron doping in periodic semiconductor nanostructures

Geometry‐induced quantum effects in periodic nanostructures

Nonadiabatic couplings and gauge-theoretical structure of curved quantum waveguides

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