Soliton instability and fold formation in laterally compressed graphene

Lima, Amauri Libério de; Müssnich, Lucas A M; Manhabosco, Taíse Matte; Chacham, H.; Batista, Ronaldo J. C.; Oliveira, Alan Barros de

doi:10.1088/0957-4484/26/4/045707

Cited by 15 publications

(28 citation statements)

References 44 publications

(50 reference statements)

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“…We believe that the resistivity reduction might be caused by the unwrinkling of the inflated graphene membrane, since wrinkles and ripples are sources of electron scattering. [58] They predicted that the resistivity increase due to these phonons should scale as T 2 , where T is temperature, confirming earlier predictions by Katsnelson and Geim. Katsnelson and Geim have proposed that ripples can be a source of electron scattering in graphene membrane and, therefore, affect its electrical transport, which has indeed been observed experimentally.…”

Section: Wwwadvelectronicmatdesupporting

confidence: 72%

“…[58] They predicted that the resistivity increase due to these phonons should scale as T 2 , where T is temperature, confirming earlier predictions by Katsnelson and Geim. Nevertheless, molecular dynamics simulations indicate wrinkle reduction under tensile stress, [58] corroborating our interpretation. [58] In our present case, we may have two distinct types of flexural deformations (static wrinkles and flexural phonons) that could affect the graphene resistivity.…”

Section: Wwwadvelectronicmatdesupporting

confidence: 72%

“…Hence, their mechanically induced reduction via membrane swelling (see Figure 1g) causes an increase in graphene conductivity via an increase in graphene mobility. [58] In our present case, we may have two distinct types of flexural deformations (static wrinkles and flexural phonons) that could affect the graphene resistivity. [55][56][57] Castro et al also reported the effect of flexural oscillations (flexural phonons) of suspended graphene on the conductivity.…”

Section: Wwwadvelectronicmatdementioning

confidence: 82%

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Graphene Electromechanical Water Sensor: The Wetristor

Meireles

Neto

Ferrari

et al. 2019

Adv Elect Materials

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between water and graphene is crucial for building up novel and smart biointerfaces. [18,19] Additionally, the study of reactivity and structure of water at the graphene interface has also generated intriguing questions and controversial results. [20,21] For instance, several experimental works demonstrate that the charge transfer process that happens between graphene and water molecules is highly dependent on the underlying substrate. [20,22] Thus, it would be highly desirable to elucidate the above discussion by probing the electrical response of a suspended graphene membrane in contact with water without the presence of any substrate. We also believe that a precise understanding of the electrochemical behavior of water/graphene interface would be fundamental for developing novel and superior electrical, mechanical, and optical devices.In the present work, we develop a microfluidic platform that integrates suspended graphene membrane windows (with electrical contacts) with buried fluid channels to probe the electrical response of a graphene membrane in contact with water. The platform design provides a direct probing of the electrical response of the air/graphene/liquid interface without the presence of any underlying substrate. [23] Our results show a significant change of graphene resistivity (of about 25%) due to the presence of water in the microchannel. The identification of the physical mechanisms behind such strong change in resistivity is not A water-induced electromechanical response in suspended graphene atop a microfluidic channel is reported. The graphene membrane resistivity rapidly decreases to ≈25% upon water injection into the channel, defining a sensitive "channel wetting" device-a wetristor. The physical mechanism of the wetristor operation is investigated using two graphene membrane geometries, either uncovered or covered by an inert and rigid lid (hexagonal boron nitride multilayer or poly(methyl methacrylate) film). The wetristor effect, namely the water-induced resistivity collapse, occurs in uncovered devices only. Atomic force microscopy and Raman spectroscopy indicate substantial morphology changes of graphene membranes in such devices, while covered membranes suffer no changes, upon channel water filling. The results suggest an electromechanical nature for the wetristor effect, where the resistivity reduction is caused by unwrinkling of the graphene membrane through channel filling, with an eventual direct doping caused by water being of much smaller magnitude, if any. The wetristor device should find useful sensing applications in general micro-and nanofluidics.

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Section: Wwwadvelectronicmatdesupporting

confidence: 72%

Section: Wwwadvelectronicmatdesupporting

confidence: 72%

Section: Wwwadvelectronicmatdementioning

confidence: 82%

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Graphene Electromechanical Water Sensor: The Wetristor

Meireles

Neto

Ferrari

et al. 2019

Adv Elect Materials

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“…Therefore, we anticipate that the combination of thermal heating and local clamping of parts of the flake with metal contacts causes anisotropic compressive strain and shear forces, which then lead to the observed folds [38][39][40] and, more importantly, provides a driving force for the soliton movement causing the transition. This is corroborated with the results of our DFT calculations that under anisotropic strain the energy of rhombohedral stacking rises faster than the energy of Bernal stacking (see Supplementary Fig.…”

Section: Stability Of Rhombohedral and Bernal Stacking Under Metal Comentioning

confidence: 99%

Anisotropic Strain-Induced Soliton Movement Changes Stacking Order and Band Structure of Graphene Multilayers: Implications for Charge Transport

Geisenhof

Winterer

Wakolbinger

et al. 2019

ACS Appl. Nano Mater.

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The crystal structure of solid-state matter greatly affects its electronic properties. For example in multilayer graphene, precise knowledge of the lateral layer arrangement is crucial, since the most stable configurations, Bernal and rhombohedral stacking, exhibit very different electronic properties.Nevertheless, both stacking orders can coexist within one flake, separated by a strain soliton that can host topologically protected states. Clearly, accessing the transport properties of the two stackings and the soliton is of high interest. However, the stacking orders can transform into one another and therefore, the seemingly trivial question how reliable electrical contact can be made to either stacking order can a priori not be answered easily. Here, we show that manufacturing metal contacts to multilayer graphene can move solitons by several µm, unidirectionally enlarging Bernal domains due to arising mechanical strain. Furthermore, we also find that during dry transfer of multilayer graphene onto hexagonal Boron Nitride, such a transformation can happen. Using density functional theory modeling, we corroborate that anisotropic deformations of the multilayer graphene lattice decrease the rhombohedral stacking stability. Finally, we have devised systematics to avoid soliton movement, and how to reliably realize contacts to both stacking configurations.

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“…In 2015, de Lima, Amauri Libério, et al [22] developed an analytical model with considering the binding and bending energies to analyze the criterion of wrinkle formation in graphene and have found that ~2.8% compressive strain is required to initiate a wrinkle in a perfect graphene layer on the top of another graphene layer. Baowen Li et al [23] proposed a wrinkle nucleation model by considering the bending stiffness of graphene, adhesion between graphene and Cu substrate, and the friction force of graphene sliding on Cu surface and successfully explained that the reference of wrinkle formation in the non-epitaxial graphene region is mainly induced by smaller friction force than that of the epitaxial graphene.…”

Section: Introductionmentioning

confidence: 99%

The wrinkle formation in graphene on transition metal substrate: a molecular dynamics study

Zhao

Liu

Kong

et al. 2020

International Journal of Smart and Nano Materials

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To explore the mechanism of the wrinkle formation in graphene on transition metal substrate, a molecular dynamics (MD) simulation package that allows us to simulate systems of millions of atoms was developed. Via the MD simulation, we reveal the detailed kinetics of wrinkles formation on a Cu substrate under compressive strain, from nucleation to one-dimensional propagation and then the splitting of a large wrinkle to a few smaller ones, which is in good conformity with experimental observation. Further study reveals that both friction and the adhesion between graphene and Cu substrate are critical for the wrinkle formation and wrinkles can be easily formed with a lower frictional force and/or a smaller adhesion. Finally, we have shown that impurities in graphene or substrates can greatly facilitate the nucleation of wrinkles. The systematic exploration of the wrinkle formation in graphene on a substrate is expected to facilitate the experimental designs for the controllable synthesis of high-quality graphene.

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Soliton instability and fold formation in laterally compressed graphene

Cited by 15 publications

References 44 publications

Graphene Electromechanical Water Sensor: The Wetristor

Graphene Electromechanical Water Sensor: The Wetristor

Anisotropic Strain-Induced Soliton Movement Changes Stacking Order and Band Structure of Graphene Multilayers: Implications for Charge Transport

The wrinkle formation in graphene on transition metal substrate: a molecular dynamics study

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