Anisotropic Strain-Induced Soliton Movement Changes Stacking Order and Band Structure of Graphene Multilayers: Implications for Charge Transport

Geisenhof, Fabian R.; Winterer, Felix; Wakolbinger, Stefan; Gokus, Tobias; Durmaz, Yasin C.; Priesack, Daniela; Lenz, Jakob; Keilmann, F.; Watanabe, Kenji; Taniguchi, Takashi; Guerrero‐Avilés, Raúl; Pelc, Marta; Ayuela, Andrés; Weitz, R. Thomas

doi:10.1021/acsanm.9b01603

Cited by 28 publications

(29 citation statements)

References 66 publications

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“…In fact, strain values of beyond 1% could be artificially applied to graphene heterostructures [30] and strain up to 0.3% has been seen in graphene encapsulated in hBN [31]. Thus detailed care must then be taken in experiments when depositing exfoliated graphenes on substrates, and when using patterned contacts [10,32], so that strain is induced by top contacts while edge contacts can help in reducing strain [33]. Summary of energy differences with respect to in-plane deformations δx and δy.…”

Section: In-plane Deformationsmentioning

confidence: 99%

“…Secondly, experimental and synthesizing techniques in 2D materials have been so improved over the years that graphene is being investigated nowadays with a defined number of layers [4,5]. Research works that focused on the same exfoliated sample of trilayer graphene (TLG) simultaneously found regions with the Bernal and rhombohedral stacking [6,7,8,9,10]. Rhombohedral graphenes are today being synthesized with a revival in a research race to show unique properties mostly due to their flat bands [11].…”

Section: Introductionmentioning

confidence: 99%

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Relative Stability of Bernal and Rhombohedral Stackings in Trilayer Graphene under Distortions

Guerrero‐Avilés¹,

Pelc²,

Geisenhof³

et al. 2021

Preprint

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Stackings in graphene have a pivotal role in properties to be discussed in the future, as seen in the recently found superconductivity of twisted bilayer graphene. Beyond bilayer graphene, the stacking order of multilayer graphene can be rhombohedral, which shows flat bands near the Fermi level that are associated with interesting phenomena, such as tunable conducting surface states expected to exhibit spontaneous quantum Hall effect, surface superconductivity, and even topological order.However, the difficulty in exploring rhombohedral graphenes is that in experiments, the alternative, hexagonal stacking is the most commonly found geometry and has been considered the most stable configuration for many years.Here we reexamine this stability issue in line with current ongoing studies in various laboratories. We conducted a detailed investigation of the relative stability of trilayer graphene stackings and showed how delicate this subject is. These fewlayer graphenes appear to have two basic stackings with similar energies. The rhombohedral and Bernal stackings are selected using not only compressions but anisotropic in-plane distortions. Furthermore, switching between stable stackings is more clearly induced by deformations such as shear and breaking of the symmetries between graphene sublattices, which can be accessed during selective synthesis approaches. We seek a guide on how to better control -by preserving and changing -the stackings in multilayer graphene samples.

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Section: In-plane Deformationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Relative Stability of Bernal and Rhombohedral Stackings in Trilayer Graphene under Distortions

Guerrero‐Avilés¹,

Pelc²,

Geisenhof³

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

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“…82 Such experiments are useful for samples that are only available in microscopic sizes, such as stacked (twisted) transition metal dichalcogenides or graphene. 83,84 Conversely, it is also possible to place apertures in the Fourier-plane in order to record real-space microscopy images at specific photoelecton momenta. This brings dark-field imaging capabilities to photoelectron microscopy.…”

Section: B Perspectives Of Tr-mmmentioning

confidence: 99%

Time-resolved momentum microscopy with a 1 MHz high-harmonic extreme ultraviolet beamline

Keunecke

Möller

Schmitt

et al. 2020

Review of Scientific Instruments

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Recent progress in laser-based high-repetition rate extreme ultraviolet (EUV) lightsources and multidimensional photoelectron spectroscopy enable the build-up of a new generation of time-resolved photoemission experiments. Here, we present a setup for time-resolved momentum microscopy driven by a 1 MHz femtosecond EUV table-top light source optimized for the generation of 26.5 eV photons. The setup provides simultaneous access to the temporal evolution of the photoelectron´s kinetic energy and in-plane momentum. We discuss opportunities and limitations of our new experiment based on a series of static and time-resolved measurements on graphene.

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“…1. Now there is fresh interest in RMG due to progress in fabricating and characterizing samples with a large layer number [23][24][25][26][27][28][29][30][31] culminating in the realization of high-quality films with up to fifty layers [32].…”

Section: Introductionmentioning

confidence: 99%

Exchange interaction, disorder, and stacking faults in rhombohedral graphene multilayers

2021

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We generalize the mean-field Hartree Fock theory of gapped electronic states at charge neutrality in bilayer graphene to thin films of rhombohedral graphite with up to thirty layers. For the ground state, the order parameter (the separation of bands at the valley center) saturates to a constant non-zero value as the layer number increases, whereas the band gap decreases with layer number. We consider chiral symmetry breaking disorder in the form of random layer potentials and chiral preserving disorder in the form of random values of the interlayer coupling. The former reduces the magnitude of the mean band gap whereas the latter has a negligible effect, which is due to selfaveraging within a film with a large number of layers. We determine the ground state in the presence of an individual stacking fault which results in two pairs of low-energy bands and we identify two separate order parameters. One of them determines the band gap at zero temperature, the other determines the critical temperature leading, overall, to a temperature dependence of the band gap that is distinct to that of pristine rhombohedral graphite. In the presence of stacking faults, each individual rhombohedral section with m layers contributes a pair of low-energy flat bands producing a peak in the Berry curvature located at a characteristic m-dependent wave vector. The Chern number per spin-valley flavor for the filled valence bands in the ground state is equal in magnitude to the total number of layers divided by two, the same value as for pristine rhombohedral graphite.

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Anisotropic Strain-Induced Soliton Movement Changes Stacking Order and Band Structure of Graphene Multilayers: Implications for Charge Transport

Cited by 28 publications

References 66 publications

Relative Stability of Bernal and Rhombohedral Stackings in Trilayer Graphene under Distortions

Relative Stability of Bernal and Rhombohedral Stackings in Trilayer Graphene under Distortions

Time-resolved momentum microscopy with a 1 MHz high-harmonic extreme ultraviolet beamline

Exchange interaction, disorder, and stacking faults in rhombohedral graphene multilayers

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