Soliton frequency comb generation in CMOS-compatible silicon nitride microresonators

Xie, Yaozu; Li, Jiaqi; Zhang, Yanfeng; Wu, Zeru; Zeng, Shihao; Lin, Shuqing; Wu, Yang; zhou, Wenchao; Chen, Yujie; Yu, Siyuan

doi:10.1364/prj.454816

Cited by 24 publications

(20 citation statements)

References 44 publications

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“…Silicon-nitride-based photonic integration platform, as one of the photonic integrated circuits (PICs) platforms, has garnered significant attention from research owing to its remarkable advantages such as low loss [1][2][3], wide transparency window [4,5] and high nonlinearity [6,7]. In particular, for integrated nonlinear photonics, thick SiN has been demonstrated as a leading material due to its strong Kerr nonlinearity and high effective refractive index as compared to that of the thincore SiN waveguides (i.e.…”

Section: Introductionmentioning

confidence: 99%

Low-loss 800nm-thick PECVD silicon nitride photonic platform on 300-mm wafer

Cai,

Li,

Lin

et al. 2024

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XVII

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In this paper we demonstrate the development and optimization of an 800 nm-thick Plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) photonic platform on a 300-mm silicon wafer. The implementation of ArF immersion lithography contributes to superior manufacturing processes, as it provides excellent critical dimension (CD) uniformity inter-and intra-wafers, make it an optimal platform of production of integrated circuits and nanoscale devices.

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Section: Introductionmentioning

confidence: 99%

Low-loss 800nm-thick PECVD silicon nitride photonic platform on 300-mm wafer

Cai,

Li,

Lin

et al. 2024

Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XVII

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“…Optical frequency combs (OFCs), consisting of equidistantly spaced spectral lines with fixed phase relationships, have been extensively demonstrated in integrated micro-ring cavities. [33][34][35] In our previous works, different low-noise states, including soliton crystal [36] and single soliton [37] have been successfully generated in high-quality (Q) factor anomalous dispersion micro-ring resonators on a deuterated silicon nitride platform, and also from micro-rings with embedded gratings on the inner sidewall. [38,39] In recent years, normal-dispersion OFCs have gained increased attention due to their high conversion efficiency and feedbackfree operation.…”

Section: Introductionmentioning

confidence: 99%

Coherent Optical Comb Generation in the Joint Space of Frequency and Topological Charge

Li,

Zeng,

Xie

et al. 2024

Laser & Photonics Reviews

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Coherent photonic states in the frequency domain or optical frequency combs are investigated widely over the past decade. Meanwhile, photonic states based on spatial coherence, in particular optical vortex states, have also been studied extensively. Further exploitation of coherent photonics state in hitherto unexplored higher dimensional spaces can reveal new realms of physics. The on‐chip generation of coherent optical combs in the 2D parameter space of frequency and topological charge is reported. Using a micro‐ring resonator embedded with angular gratings, optical frequency combs are generated by Kerr nonlinearity. The coherent comb lines, with their frequencies inherently matching the cavity resonances, are immediately diffracted by the angular grating to emit an ensemble of coherent spatial photonic states with each state carrying distinctive spin and orbital angular momenta. The mapping between the frequency and the topological charge dimensions leads to the construction of coherent combs in the high‐dimensional frequency‐topological charge (f‐l) space. Operating the device in the normal‐dispersion regime enables the adjustment of comb line spacing from 1 to 11 free spectral ranges by selectively pumping different cavity resonances with high pump‐to‐comb conversion efficiency. Such on‐chip reconfigurable high‐dimensional coherent optical combs open avenues for innovative exploration of physics.

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“…However, the optical loss within the deposited films at telecommunication wavelengths is usually high (typically 200 dB m −1 ) due to the absorption of Si─H and N─H bonds, [33] which poses a challenge for optical applications. To address this issue, deuterated silane (SiD 4 ) has been used as the deposition precursor, rather than conventional SiH 4 , [29,30,34,35] showing a 10-dB m −1 propagation loss. However, SiD 4 precursors are not commonly available in foundries and expensive, which could make this deposition method less attractive for large scale low-loss waveguide fabrication.…”

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Sputtered Ultralow‐Loss Silicon Nitride for Hybrid Photonic Integration

Zhang,

Bi,

Harder

et al. 2023

Laser & Photonics Reviews

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Silicon‐nitride‐on‐insulator (Si3N4) photonic circuits have seen tremendous advances in many applications, such as on‐chip frequency combs, Lidar, telecommunications, and spectroscopy. So far, the best film quality has been achieved with low pressure chemical vapor deposition (LPCVD) and high‐temperature annealing (1200°C). However, high processing temperatures pose challenges to the cointegration of Si3N4 with pre‐processed silicon electronic and photonic devices, lithium niobate on insulator (LNOI), and Ge‐on‐Si photodiodes. This limits LPCVD as a front‐end‐of‐line process. Here, ultralow‐loss Si3N4 photonics based on room‐temperature reactive sputtering is demonstrated. Propagation losses as low as 5.4 dB m−1 after 400°C annealing and 3.5 dB m−1 after 800°C annealing are achieved, enabling ring resonators with highest optical quality factors of > 10 million and an average quality factor of 7.5 million. To the best of the knowledge, these are the lowest propagation losses achieved with low temperature Si3N4. This ultralow loss enables the generation of microresonator soliton frequency combs with threshold powers of 1.1 mW. The introduced sputtering process offers full complementary metal oxide semiconductor (CMOS) compatibility with front‐end silicon electronics and photonics. This could enable hybrid 3D integration of low loss waveguides with integrated lasers and lithium niobate on insulator.

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Soliton frequency comb generation in CMOS-compatible silicon nitride microresonators

Cited by 24 publications

References 44 publications

Low-loss 800nm-thick PECVD silicon nitride photonic platform on 300-mm wafer

Low-loss 800nm-thick PECVD silicon nitride photonic platform on 300-mm wafer

Coherent Optical Comb Generation in the Joint Space of Frequency and Topological Charge

Low‐Temperature Sputtered Ultralow‐Loss Silicon Nitride for Hybrid Photonic Integration

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