Low-loss 800nm-thick PECVD silicon nitride photonic platform on 300-mm wafer

Abstract

In this paper we demonstrate the development and optimization of an 800 nm-thick Plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) photonic platform on a 300-mm silicon wafer. The implementation of ArF immersion lithography contributes to superior manufacturing processes, as it provides excellent critical dimension (CD) uniformity inter-and intra-wafers, make it an optimal platform of production of integrated circuits and nanoscale devices.