The effect of application alternating current on the modification of primary Mg 2 Si crystals in the hypereutectic Mg-4.8 mass%Si alloy has been investigated in the present study. The liquidus and eutectic temperatures of the Mg-4.8 mass%Si alloy are 761 C and 638 C, respectively. An alternating current of 60 A with frequency of 1 kHz was applied into the hypereutectic Mg-Si melt from different starting temperatures (770, 740, 700 and 670 C) till 630 C. The results show that primary Mg 2 Si crystals could be refined effectively by application alternating current. The average sizes of primary Mg 2 Si crystals were decreased to almost a half after being subjected to the alternating current. The starting temperature of the application alternating current is a very significant factor to determine the size uniformity of the primary Mg 2 Si crystals, while it has no obvious effect on the average size of the primary Mg 2 Si crystals. The refined primary Mg 2 Si crystals have the lowest average size and the highest uniformity in sizes when the hypereutectic Mg-Si melt was treated by application alternating current from the starting temperature of 700 C.