Solidification of Silicon for Solar Cells

Arnberg, L.; Sabatino, Marisa Di; Øvrelid, Eivind

doi:10.1007/s12666-012-0165-2

Cited by 3 publications

(3 citation statements)

References 6 publications

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“…The latest reports show that multicrystalline silicon has gained more ground in the last years and made up 70% of the market in 2016 . While the Czochralski (CZ) crystallization technique provides high‐quality monocrystalline material leading to higher cell efficiencies, the directional solidification of multicrystalline ingots allows for higher throughput and lower production costs, offsetting its lower efficiency . Still much effort is aimed at decreasing the negative effect of structural defects on the device performance .…”

Section: Introductionmentioning

confidence: 99%

“…[1,2] While the Czochralski (CZ) crystallization technique provides high-quality monocrystalline material leading to higher cell efficiencies, the directional solidification of multicrystalline ingots allows for higher throughput and lower production costs, offsetting its lower efficiency. [3,4] Still much effort is aimed at decreasing the negative effect of structural defects on the device performance. [5,6] One approach is to control the structure of the final ingot by changing the nucleation phase, such as growing Quasi-Mono (QM) silicon [7] or High Performance Multicrystalline (HPMC) ingots.…”

Section: Introductionmentioning

confidence: 99%

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Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Adamczyk

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You

et al. 2017

Physica Status Solidi (a)

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Wafers from a hybrid silicon ingot seeded in part for High Performance Multicrystalline, in part for a quasi‐mono structure, are studied in terms of the effect of gettering and hydrogenation on their final Internal Quantum Efficiency. The wafers are thermally processed in different groups – gettered and hydrogenated. Afterwards, a low temperature heterojunction with intrinsic thin layer cell process is applied to minimize the impact of temperature. Such procedure made it possible to study the effect of different processing steps on dislocation clusters in the material using the Light Beam Induced Current technique with a high spatial resolution. The dislocation densities are measured using automatic image recognition on polished and etched samples. The dislocation recombination strengths are obtained by a correlation of the IQE with the dislocation density according to the Donolato model. Different clusters are compared after different process steps. The results show that for the middle of the ingot, the gettering step can increase the recombination strength of dislocations by one order of magnitude. A subsequent passivation with layers containing hydrogen can lead to a decrease in the recombination strength to levels lower than in ungettered samples.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Adamczyk

Søndenå

You

et al. 2017

Physica Status Solidi (a)

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“…Control of the nucleation during directional solidification of silicon allows to controlling the structure development in the final ingot. Many research works have been devoted to study and understand the solidification mechanisms 2, 24. In particular, research works have proposed new methods of crystallization to achieve high efficiency solar cells.…”

Section: Improved Crystallization Methodsmentioning

confidence: 99%

Defect generation, advanced crystallization, and characterization methods for high‐quality solar‐cell silicon

Sabatino

Stokkan

2012

Physica Status Solidi (a)

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Silicon is the dominant material for production of solar cells. Research work constantly aims at improving the quality of the silicon materials to achieve higher solar‐cell conversion efficiencies. It has been demonstrated that defects and impurities, often rising during the silicon ingot production and due to the presence of impurity sources throughout the silicon solar‐cell value chain (e.g. silicon feedstock, crucible and coating, furnace atmosphere, etc.), have a detrimental effect on device performances. Crystallization is the first step in the solar‐cell value chain. During crystallization, crystal defects, such as grain boundaries and dislocations, develop, and impurities, such as dopants and metals, distribute. By controlling the process, we can also control the defect formation and impurity segregation. In this study, we review some of the work carried out at NTNU to understand the role of defects and impurities on materials properties. Specifically, we report on some of the work done on defects, crystallization, and characterization.

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Potential of producing solar grade silicon nanoparticles from selected agro-wastes: A review

et al. 2017

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Solidification of Silicon for Solar Cells

Cited by 3 publications

References 6 publications

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Defect generation, advanced crystallization, and characterization methods for high‐quality solar‐cell silicon

Potential of producing solar grade silicon nanoparticles from selected agro-wastes: A review

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