1994
DOI: 10.1007/bf00352037
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Solid-state synthesis and characterization of the ternary phase Ti3SiC2

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Cited by 312 publications
(142 citation statements)
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“…Powder X-ray diffraction analysis was performed to verify new solid state formation [29]. P-XRD analysis was conducted for unprocessed FTD and processed FTD (FFSe-4) using an X-ray diffractometer JDX-3532 (JEOL Japan).…”
Section: Powder X-ray Diffraction (P-xrd)mentioning
confidence: 99%
“…Powder X-ray diffraction analysis was performed to verify new solid state formation [29]. P-XRD analysis was conducted for unprocessed FTD and processed FTD (FFSe-4) using an X-ray diffractometer JDX-3532 (JEOL Japan).…”
Section: Powder X-ray Diffraction (P-xrd)mentioning
confidence: 99%
“…Since then, several processing techniques have been developed to synthesize single-phase, bulk, polycrystalline Ti 3 SiC 2 . These processing techniques include arc melting [5], direct sintering [6], reactive hot-pressing (HP) [1], hot-isostatic pressing (HIP) [3], spark plasma sintering (SPS) [7], pulse discharge sintering (PDS) [8] and self-propagating high-temperature synthesis (SHS) [9]. A variety of precursor materials viz.…”
Section: Introductionmentioning
confidence: 99%
“…1 In recent decades, to synthesize Ti 3 SiC 2 samples, various processes including: (1) chemical vapor deposition; 2 (2) arc-melting method; 3 (3) Hot-isolated-pressing (HIP) or spark plasma sintering (SHS) method; 4À9 and (4) reactive sintering method; 10À13 were employed or developed. In the earlier sintering methods, most investigators preferred to fabricate this material by using the elemental powders of Ti/Si/C with different molar ratios, such as Lis et al, 5,6 Li et al, 7,8 Gao et al , 9 Racault et al, 10 Radhakrishnan et al, 11 Zhou and Sun. 12,13 However, it is noted that their sintering processes were often performed at relatively high temperature (more than 1400 C) for a long time.…”
Section: Introductionmentioning
confidence: 99%