“…1 In recent decades, to synthesize Ti 3 SiC 2 samples, various processes including: (1) chemical vapor deposition; 2 (2) arc-melting method; 3 (3) Hot-isolated-pressing (HIP) or spark plasma sintering (SHS) method; 4À9 and (4) reactive sintering method; 10À13 were employed or developed. In the earlier sintering methods, most investigators preferred to fabricate this material by using the elemental powders of Ti/Si/C with different molar ratios, such as Lis et al, 5,6 Li et al, 7,8 Gao et al , 9 Racault et al, 10 Radhakrishnan et al, 11 Zhou and Sun. 12,13 However, it is noted that their sintering processes were often performed at relatively high temperature (more than 1400 C) for a long time.…”