Solid-state photoelectronics of the ultraviolet range (Review)

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

“…However, the limited absorption range and weak absorbance of silicon greatly restrict the further development and practical application of silicon‐based photodetectors. To promote the development of highly efficient and specific photodetectors, a large variety of semiconductor materials have been investigated and photodetectors with different structures have been fabricated …”

“…Narrow‐bandgap semiconductors are always used as infrared photodetectors, such as Cu 2 O, PbS, CuO, etc . Furthermore, wide‐bandgap semiconductor materials are the suitable candidates for the ultraviolet photodetectors, including ZnO, TiO 2 , diamond, GaN, and so on . For the photoconductive‐type photodetectors based on these semiconductor materials, the concentrations of carriers are different under darkness and light illumination, and the change of illumination condition would lead to the variation of contrast between photocurrent and dark current.…”

Extended linear detection range of a Bi0.5Na0.5TiO3 thin film-based self-powered UV photodetector via current and voltage dual indicators

“…[1][2][3][4][5][6][7][8][9] UV photodetectors can be classified into three main development stages, namely, UV photomultiplier tubes, Si-based UV photodetectors, and third-generation broadband semiconductor materials (such as ZnO-based, GaN-based, and SiC and Ga 2 O 3based). [10][11][12][13][14][15][16] Although UV photomultiplier tubes have a stable and quick response, allowing for high-response UV detection, the photomultiplier tube requires a large power source and cathode cooling. This makes it bulky and power-hungry as well as unsuitable for practical applications.…”