Solid state lasers

Weber, Horst

doi:10.1007/978-1-4615-5295-6_4

Cited by 2 publications

(1 citation statement)

References 20 publications

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“…Due to lattice mismatch of 4% between Si and Ge, relatively thick layers are relaxed into defects through the creation of misfit dislocations and resulting threading dislocations running to the surface. The misfit dislocation structure present in compound semiconductors and their association with photoluminescence emission were reported earlier [3]. These emissions were observed as D-band dislocation luminescence and have been associated with interstitial-type defects as supported also by DLTS measurements [4].…”

Section: Introductionsupporting

confidence: 64%

Defect studies in strain-relaxed Si$_{1-x}$Ge$_{x}$ alloys

Kalem¹

2013

Turk J Phys

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Section: Introductionsupporting

confidence: 64%

Defect studies in strain-relaxed Si$_{1-x}$Ge$_{x}$ alloys

Kalem¹

2013

Turk J Phys

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Vertical-cavity laser based on interband-tunneling staggered-bandgap heterostructure

2006

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A new concept is presented for realizing midwave-infrared vertical-cavity lasers based on an interband-resonant-tunneling-diode (I-RTD). Model equations are derived in terms of material and structure parameters for predicting the output power in an I-RTD laser device constructed of InAs/AlGaSb layers. Simulation made for midwave-infrared lasers suggest that the radiation output density power in this I-RTD laser can be achieved of the order of 40 W/cm 2 .Keywords: midwave-infrared laser, staggered-bandgap heterostructure, room temperature I IntroductionLasers and LEDs that operate in the Midwave-Infrared (2-5 µm) have significant potential applications in the areas of remote sensing including detection and monitoring of atmospheric constituents, chemical monitoring, detection and monitoring of chemical and biological weapons, medical diagnostics, and infrared countermeasures. The MidwaveInfrared (MWIR) region is more effective at penetrating obscurants than shorter-wavelength regions. Traditional diode lasers operating in that region are typically of low power and are unable to operate at room temperature [1].A new concept is presented for realizing a vertical-cavity laser (VCL) based on an interband-resonanttunneling-diode (I-RTD). The laser consists of an InAs quantum well between two AlGaSb barriers and a spacer region adjacent to the collector. The Zener interband tunneling through the spacer region of this staggered-bandgap heterostructure (SBH) creates conditions at large applied biases for charge flowing and radiation recombination in this unipolar device. We have previously studied the I-RTD as a potential new candidate for a mid-infrared laser [2,3] and it was shown to produce superior optical gain. It is demonstrated in this paper that the I-RTD can also be designed for MWIR laser and the results are promising for room temperature operation -i.e., output power densities on the order of 40 W/cm 2 .A novel type of interband-RTD (I-RTD) studied in [2,3] is based upon SBHs as illustrated in Fig. 1. The quantum well is formed by InAs sandwiched between two barrier regions (AlGaSb/InAs/AlGaSb double barrier structure). The left Al x Ga 1-x Sb barrier is adjacent to a highly doped InAs emitter while the right barrier is adjacent to the undoped InAs spacer which is grown on the highly doped InAs collector region. This device was of interest because it may offer a completely new avenue for the development of very highfrequency sources [4]. As had been previously pointed out by others [5], the existence of interband tunneling through the spacer can lead to the charging of the valence-band (VB) well in the right barrier region by hole accumulation. In fact, at large applied biases when occupied hole-levels in the VB well come into alignment with unoccupied electron states in the collector region, an interband tunneling process (i.e., electron transport) is available to charge the right barrier. Hence under bias we have holes and electrons in SBH layers. Their radiative recombination may be considered as a potential...

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Solid state lasers

Cited by 2 publications

References 20 publications

Defect studies in strain-relaxed Si$_{1-x}$Ge$_{x}$ alloys

Defect studies in strain-relaxed Si$_{1-x}$Ge$_{x}$ alloys

Vertical-cavity laser based on interband-tunneling staggered-bandgap heterostructure

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