Solid-State Impact-Ionization Multiplier With P-N Junction Injection Node

Johnson, M. S.; Beutler, Joshua; Nelson, Audrey; Hawkins, Aaron R.

doi:10.1109/ted.2009.2019421

IEEE Trans. Electron Devices

2009

DOI: 10.1109/ted.2009.2019421

|View full text |Cite

Solid-State Impact-Ionization Multiplier With P-N Junction Injection Node

M. S. Johnson

Joshua Beutler

Audrey Nelson

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2009

2020

Publication Types

Select...

Article3

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

(1 citation statement)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…SIMs have been fabricated on a p+ substrate with a p-epitaxial layer (Figure 1a). The injection and output electrodes are doped n+ [2][3]. Signal electrons enter the SIM through the input electrode from a current source.…”

mentioning

confidence: 99%

Improving Gain Efficiency in Planar Impact Ionization Devices

Johnson,

Shuldberg,

Hawkins

2010

Meet. Abstr.

View full text Add to dashboard Cite

show abstract

mentioning

confidence: 99%

Improving Gain Efficiency in Planar Impact Ionization Devices

Johnson,

Shuldberg,

Hawkins

2010

Meet. Abstr.

View full text Add to dashboard Cite

show abstract

SiO$_2$ Barriers for Increasing Gain Events in Solid-State Impact-Ionization Multipliers

Johnson

Beutler

Nelson

et al. 2009

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

High gain and low excess noise InGaAs/InP avalanche photodiode with lateral impact ionization

Wang

Tian

et al. 2020

Appl. Opt.

View full text Add to dashboard Cite

In this paper, modeling for a lateral impact ionization InGaAs/InP avalanche photodiode (APD) has been performed based on a device simulator, i.e., Silvaco ATLAS. Compared with traditional APDs, the lateral impact ionized APD has much higher gains as well as lower excess noise. The internal gain for our newly proposed lateral APD is over 1000—near the breakthrough voltage. In addition, the excess noise characteristic of this device is also discussed with three-dimensional dead space multiplication theory, and the calculated effective k value is obviously lower than traditional InGaAs/InP APDs. Because of the high gain and low excess noise characteristics, the proposed APD can be widely applied for optical detection with high sensitivity.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Solid-State Impact-Ionization Multiplier With P-N Junction Injection Node

Cited by 3 publications

References 10 publications

Improving Gain Efficiency in Planar Impact Ionization Devices

Improving Gain Efficiency in Planar Impact Ionization Devices

SiO$_2$ Barriers for Increasing Gain Events in Solid-State Impact-Ionization Multipliers

High gain and low excess noise InGaAs/InP avalanche photodiode with lateral impact ionization

Contact Info

Product

Resources

About