2009
DOI: 10.1109/jqe.2009.2021144
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SiO$_2$ Barriers for Increasing Gain Events in Solid-State Impact-Ionization Multipliers

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Cited by 2 publications
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“…SIMs have been fabricated on a p+ substrate with a p-epitaxial layer (Figure 1a). The injection and output electrodes are doped n+ [2][3]. Signal electrons enter the SIM through the input electrode from a current source.…”
mentioning
confidence: 99%
“…SIMs have been fabricated on a p+ substrate with a p-epitaxial layer (Figure 1a). The injection and output electrodes are doped n+ [2][3]. Signal electrons enter the SIM through the input electrode from a current source.…”
mentioning
confidence: 99%