Solid-state graphitization mechanisms of silicon carbide 6H–SiC polar faces

Forbeaux, I.; Themlin, J.‐M.; Charrier, Anne; Thibaudau, F.; Debever, J.M.

doi:10.1016/s0169-4332(00)00224-5

Cited by 125 publications

(138 citation statements)

References 28 publications

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“…The azimuthal streaks in Fig. 1(c) may indicate some rotational disorder in the graphene sheets (as previously observed [9]). …”

supporting

confidence: 77%

“…[7,8,9] These studies showed that graphite grows epitaxially on the (0001) Siterminated (Si-face) surface of SiC, while graphite grown on the C-terminated (0001) (C-face) surface was rotationally disordered and under some conditions formed nanocaps instead of a smooth film. [10] Consequently, the C-face was initially overlooked as a potential substrate for graphene-based electronics.…”

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confidence: 99%

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Highly ordered graphene for two dimensional electronics

Hass

Feng

et al. 2006

Applied Physics Letters

337

263

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With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) (Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this paper we show that graphene grown from the SiC(0001) (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C-face can have structural domain sizes more than three times larger than those grown on the Si-face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.

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“…The azimuthal streaks in Fig. 1(c) may indicate some rotational disorder in the graphene sheets (as previously observed [9]). …”

supporting

confidence: 77%

mentioning

confidence: 99%

Highly ordered graphene for two dimensional electronics

Hass

Feng

et al. 2006

Applied Physics Letters

337

263

View full text Add to dashboard Cite

show abstract

“…On the Si-face, UHV annealing leads to small domains, *30-100 nm [168,169]. (Si (0001)-and C (000-1)-terminated) annealed at high T ([1000°C) under ultra-high vacuum (UHV) graphitize due to the evaporation of Si [170,171]. Graphene films by thermal decomposition of SiC above1000°C, graphene grows on a C-rich 6H3 9 6H3R30°rebuilding with respect to the SiC surface [172,181].…”

Section: Epitaxial Growth Of Graphenementioning

confidence: 99%

Synthesis of graphene

et al. 2016

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Graphene, a two-dimensional material of sp 2 hybridization carbon atoms, has fascinated much attention in recent years owing to its extraordinary electronic, optical, magnetic, thermal, and mechanical properties as well as large specific surface area. For the tremendous application of graphene in nano-electronics, it is essential to fabricate high-quality graphene in large production. There are different methods of generating graphene. This review summarizes the exfoliation of graphene by mechanical, chemical and thermal reduction and chemical vapor deposition and mentions their advantages and disadvantages. This article also indicates recent advances in controllable synthesis of graphene, illuminates the problems, and prospects the future development in this field.

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“…On the contrary, combining STM and LEED data with DFT calculations Chen et al [6] came to the conclusion that the graphite sheet is formed on a complex 6 × 6-structure, from which originates the observed 6 √ 3 × 6 √ 3R30 • reconstruction that precedes the graphite formation. On the C-terminated SiC(0001) face, graphite growth on top of a 2 × 2 reconstruction was reported [5,7]. Berger et al [1,2] observed the formation of large high-quality graphene islands on top of a 1 × 1 C-terminated SiC substrate with a √ 3 × √ 3R30 • interface reconstruction.…”

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confidence: 99%

Ab InitioStudy of Graphene on SiC

2007

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Employing density-functional calculations we study single and double graphene layers on Si-and C-terminated 1 × 1 -6H-SiC surfaces. We show that, in contrast to earlier assumptions, the first carbon layer is covalently bonded to the substrate, and cannot be responsible for the graphenetype electronic spectrum observed experimentally. The characteristic spectrum of free-standing graphene appears with the second carbon layer, which exhibits a weak van der Waals bonding to the underlying structure. For Si-terminated substrate, the interface is metallic, whereas on C-face it is semiconducting or semimetallic for single or double graphene coverage, respectively.PACS numbers: 68.35. Ct, 68.47.Fg, The last years have witnessed an explosion of interest in the prospect of graphene-based nanometer-scale electronics [1,2,3,4]. Graphene, a single hexagonally ordered layer of carbon atoms, has a unique electronic band structure with the conic "Dirac points" at two inequivalent corners of the two-dimensional Brillouin zone. The electron mobility may be very high and lateral patterning with standard lithography methods allows device fabrication [1]. Two ways of obtaining graphene samples have been used up to now. In the first "mechanical" method, the carbon monolayers are mechanically split off the bulk graphite crystals and deposited onto a SiO 2 /Si substrate [4]. This way an almost "freestanding" graphene is produced, since the carbon monolayer is practically not coupled to the substrate. The second method uses epitaxial growth of graphite on singlecrystal silicon carbide (SiC). The ultrathin graphite layer is formed by vacuum graphitization due to Si depletion of the SiC surface [5]. This method has apparent technological advantages over the "mechanical" method, however it does not guarantee that an ultrathin graphite (or graphene) layer is electronically isolated from the substrate. Moreover, one expects a covalent coupling between both which may strongly modify the electronic properties of the graphene overlayer. Yet, experiments show that the transport properties of the interface are dominated by a single epitaxial graphene layer [1,2]. Most surprisingly, the electronic spectrum seems not to be affected much by the substrate. As in free-standing graphene one observes the "Dirac points" with the linear dispersion relation around them. The electron dynamics is governed by a Dirac-Weyl Hamiltonian with the Fermi velocity of graphene replacing the speed of light. This leads to an unusual sequence of Landau levels in a magnetic field and hence to peculiar features in the quantum Hall effect [1,4].

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Solid-state graphitization mechanisms of silicon carbide 6H–SiC polar faces

Cited by 125 publications

References 28 publications

Highly ordered graphene for two dimensional electronics

Highly ordered graphene for two dimensional electronics

Synthesis of graphene

Ab InitioStudy of Graphene on SiC

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