Highly ordered graphene for two dimensional electronics

Abstract

With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) (Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this paper we show that graphene grown from the SiC(0001) (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C-face can have structural domain sizes more than three times larger than those grown on the Si-face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.

Raman spectroscopy and imaging of graphene

“…For SLG, it is known that the low energy dispersion is linear [65], which make charge carriers in SLG behave like massless Dirac Fermions. Interestingly, recent studies such as magnetotransport [31], and far infrared magneto-transmission [66] investigations on multilayer epitaxial graphene (EG) with stacking disorder [67,68] still revealed the two dimensional Dirac-like (SLG-like) character of the electronic states. Furthermore, theoretical calculations of the electronic structure of BLG with a twist in the second layer were carried out.…”

Thermionic and tunneling transport mechanisms in graphene field‐effect transistors

“…In particular, the difference between the Fermi energies near the source and drain is equal to d eV . Taking into account the linear dispersion relation for electrons and holes, for the degenerate 2DEG and degenerate 2DHG in the pertinent n-and p-regions under the top gate, one obtains respectively the following expressions for the electron and hole densities [5,6]:…”

“…1 Introduction Success in the fabrication of Graphene, i.e., a monolayer of carbon atoms forming a dense honeycomb two-dimensional (2D) crystal structure can result in a significant progress in micro-and nanoelectronics [1][2][3][4][5]. Due to the massless electron and hole energy spectra with zeroth energy gap, graphene exhibits the exceptional properties.…”

Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped6H-SiC

“…8 Unfortunately, whatever the SiC polytype under investigation (4H, 6H or even 3C), the sublimation conditions pressure varying from UHV (Ultra-High Vacuum) below 10 -9 Torr to more standard SV (Secondary Vacuum) conditions in the range of 10 -8 to 10 -6 Torr, it is still challenging to grow FLG with homogeneous domain sizes larger than few hundred nanometers. [9][10][11] However, sublimation from the Cface leads to wider domains and higher mobility than the Si-face. 10 But still, it is hardly possible to process homogeneous devices on a wafer.…”

“…[9][10][11] However, sublimation from the Cface leads to wider domains and higher mobility than the Si-face. 10 But still, it is hardly possible to process homogeneous devices on a wafer. Noticeable exceptions are the recent results by Virojanadara et.…”