Abstract-Low-frequency noise (LFN) characterization of high-k LaLuO 3 /TiN nMOS transistors is presented. The experimental results including the noise spectrum and normalized power noise density and mobility are reported. The noise results were successfully modeled to the correlated number and mobility fluctuation noise equation. High-k dielectric devices show lower mobility and roughly one to two orders of magnitude higher low-frequency noise which is comparable to the hafnium based oxide layers. The implementation of higher-k LaLuO 3 seems to be a suitable candidate to the tradeoff between equivalent oxide thickness scaling and low frequency noise.