Solid Source Dry Etching Process for GaAs and InP

Abstract

To understand the origin of the spin-glass state in molybdate pyrochlores, the structure of Tb 2 Mo 2 O 7 is investigated using two techniques: the long-range lattice structure was measured using neutron powder diffraction, and local structure information was obtained from the extended x-ray absorption fine structure technique. While the long-range structure appears generally well ordered, enhanced mean-squared site displacements on the O(1) site and the lack of temperature dependence of the strongly anisotropic displacement parameters for both the Mo and O(1) sites indicate some disorder exists. Likewise, the local structure measurements indicate some Mo-Mo and Tb-O(1) nearest-neighbor disorder exists, similar to that found in the related spin-glass pyrochlore, Y 2 Mo 2 O 7 . Although the freezing temperature in Tb 2 Mo 2 O 7 , 25 K, is slightly higher than in Y 2 Mo 2 O 7 , 22 K, the degree of local pair distance disorder is actually less in Tb 2 Mo 2 O 7 . This apparent contradiction is considered in light of the interactions involved in the freezing process.

Fabrication of Silicon Microchannel for Transport of Bacterial Cells by Ar/F2 Vapor Etching Process

“…We used an ICP etching system (Samco RIE-101ip) with Cl 2 as an etching gas. [19][20][21][22][23] The etching conditions were a Cl 2 flow rate of 2 sccm, an ICP/bias RF power of 300/20 W, and a pressure of 1 Pa. The substrate temperature was 90 C. 24) The width of the upper part of the microchannel was 2 m, and the width and depth of the lower part of the microchannel were 0.7 and 0.5 m, respectively.…”

Microfabrication of Si-Based High-Index-Contrast-Grating Structure by Thermal Nanoimprint Lithography and Cl2/Xe-Inductively Coupled Plasma Etching

“…[19][20][21][22] However, the dry etching process for a III-V compound semiconductor such as GaAs and InP used in the VCSEL structure is performed at a relatively high temperature. [23][24][25][26][27] It would be convenient if the same system could be available for the dry etching process of both the III-V compound semiconductor and Si. Some vertical etching techniques of Si using a passivation layer oxidized by Cl 2 /O 2 plasma have reported.…”

Generation of Solid-Source H2O Plasma and Its Application to Dry Etching of CaF2

“…In addition, we succeeded in the dry etching of GaAs by using ICl 3 powder as a source of chlorine. 1) As an aside, the materials used for optical and electron devices are not only compound semiconductors but also other materials such as fluorides or oxides. Generally, Cl 2 gas is used in the dry etching of compound semiconductors.…”