Solid-solubility limits of Be in molecular beam epitaxy grown AlxGa1−xAs layers and short-period superlattices

Gaymann, A.; Maier, M.; Köhler, K.

doi:10.1063/1.371362

Cited by 8 publications

(3 citation statements)

References 6 publications

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“…However, p-GaP is lattice-mismatched for AlGaAs materials used mainly for reflective 850 nm IR-LEDs. Furthermore, Be in Au/Be is not useful for AlGaAs-based quantum wells due to its high likelihood to be diffused to the active region [ 18 , 19 ].…”

Section: Resultsmentioning

confidence: 99%

Study on P-AlGaAs/Al/Au Ohmic Contact Characteristics for Improving Optoelectronic Response of Infrared Light-Emitting Device

Lee¹,

Shim

Park

et al. 2023

Micromachines

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The Al/Au alloy was investigated to improve the ohmic characteristic and light efficiency of reflective infrared light-emitting diodes (IR-LEDs). The Al/Au alloy, which was fabricated by combining 10% aluminum and 90% gold, led to considerably improved conductivity on the top layer of p-AlGaAs of the reflective IR-LEDs. In the wafer bond process required for fabricating the reflective IR-LED, the Al/Au alloy, which has filled the hole patterns in Si3N4 film, was used for improving the reflectivity of the Ag reflector and was bonded directly to the top layer of p-AlGaAs on the epitaxial wafer. Based on current-voltage measurements, it was found that the Al/Au alloyed material has a distinct ohmic characteristic pertaining to the p-AlGaAs layer compared with those of the Au/Be alloy material. Therefore, the Al/Au alloy may constitute one of the favored approaches for overcoming the insulative reflective structures of reflective IR-LEDs. For a current density of 200 mA, a lower forward voltage (1.56 V) was observed from the wafer bond IR-LED chip made with the Al/Au alloy; this voltage was remarkably lower in value than that of the conventional chip made with the Au/Be metal (2.29 V). A higher output power (182 mW) was observed from the reflective IR-LEDs made with the Al/Au alloy, thus displaying an increase of 64% compared with those made with the Au/Be alloy (111 mW).

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Section: Resultsmentioning

confidence: 99%

Study on P-AlGaAs/Al/Au Ohmic Contact Characteristics for Improving Optoelectronic Response of Infrared Light-Emitting Device

Lee¹,

Shim

Park

et al. 2023

Micromachines

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“…This can be because the bond between Ga and P is stronger than that between Ga and As . With the increase of P in the NW, it is more difficult for Be atom to be incorporated as it needs to overcome higher energy barriers . Therefore, the Be accumulation inside the Ga droplet is faster for NWs grown with higher P content, especially under high doping flux.…”

mentioning

confidence: 99%

Growth and Fabrication of High‐Quality Single Nanowire Devices with Radial p‐i‐n Junctions

Zhang

Sanchez

Aagesen

et al. 2018

Small

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Nanowires (NWs) with radial p‐i‐n junction have advantages, such as large junction area and small influence from the surface states, which can lead to highly efficient material use and good device quantum efficiency. However, it is difficult to make high‐quality core–shell NW devices, especially single NW devices. Here, the key factors during the growth and fabrication process that influence the quality of single core–shell p‐i‐n NW devices are studied using GaAs(P) NW photovoltaics as an example. By p‐doping and annealing, good ohmic contact is achieved on NWs with a diameter as small as 50–60 nm. Single NW photovoltaics are subsequently developed and a record fill factor of 80.5% is shown. These results bring valuable information for making single NW devices, which can further benefit the development of high‐density integration circuits.

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“…Experimentally, thermally activated redistribution of impurities through semiconductor heterointerfaces, i.e., interfacial segregation, has been investigated for Si=SiGe heterostructures, where the equilibrium concentrations of dopants in Si and in SiGe layers differ by a factor of 2 -3 [4][5][6][7]. This effect is stronger in III-V heterostructures [8,9], where concentration differences may reach 2 orders of magnitude and affect the luminescence efficiency of light-emitting diodes [10]. At this point, however, fundamental understanding of segregation is still lacking, and only a phenomenological theory of segregation exists [11].…”

mentioning

confidence: 99%

Interfacial Segregation and Electrodiffusion of Dopants inAlN/GaNSuperlattices

2006

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A first-principles theory of interfacial segregation of dopants and defects in heterostructures is developed and applied to GAN/A1N superlattices. The results indicate that the equilibrium concentrations of a dopant at two sides of an interface may differ by up to a few orders of magnitude, depending on its chemical identity and charge state, and that these cannot be obtained from calculations for bulk constituents alone. In addition, the presence of an internal electric field in polar heterostructures induces electro-migration and accumulation of hydrogen at the appropriate interfaces.

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Solid-solubility limits of Be in molecular beam epitaxy grown AlxGa1−xAs layers and short-period superlattices

Cited by 8 publications

References 6 publications

Study on P-AlGaAs/Al/Au Ohmic Contact Characteristics for Improving Optoelectronic Response of Infrared Light-Emitting Device

Study on P-AlGaAs/Al/Au Ohmic Contact Characteristics for Improving Optoelectronic Response of Infrared Light-Emitting Device

Growth and Fabrication of High‐Quality Single Nanowire Devices with Radial p‐i‐n Junctions

Interfacial Segregation and Electrodiffusion of Dopants inAlN/GaNSuperlattices

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