Solid Incorporation of AlGaN and Influence of Growth Interruption on GaN/AlGaN Quantum Well Structures Grown by MOCVD

In0.2Ga0.8N/In0.03Ga0.97N 3-period multiple quantum wells (MQWs) were grown by low pressure metalorganic chemical vapor deposition and the effects of pre-In flow prior to QW growth on its overall optical property were investigated. Pre-In flow did not change the structural property of the MQW structure such as In composition and period but strongly influenced its optical properties. MQW samples grown with pre-In flow exhibited longer peak wavelength and stronger peak intensity. CL measurement revealed more uniform and smaller emission centers in pre-In flow samples, implying a reduction of non-radiative defective regions and more In-rich regions. These results indicate that the In source introduced prior to QW growth preferentially gets incorporated around defect sites such as threading dislocations to inhibit their propagation while forming seeds for In-rich regions.

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Solid Incorporation of AlGaN and Influence of Growth Interruption on GaN/AlGaN Quantum Well Structures Grown by MOCVD

Cited by 2 publications

References 15 publications

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The Effects of In Flow during Growth Interruption on the Optical Properties of InGaN Multiple Quantum Wells Grown by Low Pressure Metalorganic Chemical Vapor Deposition

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