Solid electrolyte memory for flexible electronics

Flexible One Diode-One Phase Change Memory Array Enabled by Block Copolymer Self-Assembly

“…Figure S1 in the Supporting Information describes the fabrication procedures of the 1D-1P devices. To reduce the reset current of the flexible PCM devices, the self-assembly of Si-containing poly(styrene- b -dimethylsiloxane) (PS- b -PDMS) BCPs was introduced because the operation current of conventional PCM device (contact hole size = 2 μm) on plastics is 58 mA, as shown in Supporting Information Figure S2, which not only thermally damage a plastic substrate and intercells but also exceeds the current supply capability of the selection device. ,− The thermally stable SiO x nanostructures can easily be converted from self-assembled PDMS microdomains after O 2 plasma treatment, ,, as shown in the inset of Figure a. The regularly arranged insulating SiO x nanostructures can be highly beneficial for reducing the contact area between GST and TiN films on plastics, thus resulting in a decrease in the reset current owing to the reduced switching volume.…”

“…Rapid advances in flexible electronics have been recently made for their potential use in paper-like displays, , plastic radio frequency identification (RFID) tags, bioimplantable devices, − and other types of electronic devices. − To operate flexible electronic devices, however, further performance improvement of flexible memories is a key issue owing to their critical roles in code processing, data storage, and radio frequency communication. − Phase-change memory (PCM) is one of the most viable candidates for next-generation nonvolatile flexible memories due to its multiple advantages of excellent cycling endurance, high speed, and outstanding scalability. − In the realization of a high-performance flexible PCM, a large writing current is the major obstacle because flexible PCM devices work at a high current, for example, over 50 mA for micrometer contact. − The operating current of PCM can be diminished as the switching volume of the phase-change material becomes smaller ( i.e. , a decrease in the power consumption per cell with reduction in device feature size) .…”

Partially printed resistive memory cells on rigid and flexible substrates

“…The used ink was a conductive organic polymer. Also, the manufacturing process was transferred from a silicon wafer to a cheaper and flexible foil, which allowed for measuring a silicon oxide‐based memristor under physical stress . The new substrate in combination with a thin device setup is of importance because on the one hand, foils are cheap alternatives to silicon substrates.…”

Printed complementary organic thin film transistors based decoder for ferroelectric memory

“…Consequently such technology could enable the integration of electronic at low-cost in different consumer's goods. In this context, OTFTs has already been demonstrated as enabler for several key applications such as electronic paper (e-paper) [3], smart sensors [4] [5] and information storage devices [6] [7]. The research in the field of organic memory has mainly focused on the development and optimization of innovative organic memories devices, and especially Ferroelectric random access memory [8].…”