Partially printed resistive memory cells on rigid and flexible substrates

Abstract

The fabrication and characterization of resistive memory cells based on a silver/silicon oxide stack with a printed polymer electrode is described. Memory cells were fabricated on standard silicon wafers as well as on flexible polymer foils. The partially printed cells showed low switching voltages and currents. Together with the possibility of multi‐level data storage even on flexible substrates, the potential for low power, high density, and printed cheap memory cells is demonstrated. Memristor with printed electrode and its current–voltage characteristic.

Memristive devices based on mass printed organic resistive switching layers

“…MATLAB® scripts making use of the Instrument Control ToolboxTM (MathWorks) are employed to control the sourcemeter, for measurement automatization, data analysis, and visualization. For electrical measurements during mechanical (bending) stress a bending fixture that allows the variations of the curvature radius of the memristive devices was used, as described in [52]. Layer thicknesses are measured with a Dektak XT stylus profilometer (Bruker).…”

“…Figure 5 presents the performance of the resistive switching device under bending stress. Figure S6 of the Supplemental Information illustrates the bending fixture according to [52]. The bending radius r is approximated by r = b 2 /8/h [52] and was changed from 160 to 30 mm.…”

“…Figure S6 of the Supplemental Information illustrates the bending fixture according to [52]. The bending radius r is approximated by r = b 2 /8/h [52] and was changed from 160 to 30 mm. The bending radius down to 30 mm has no significant and systematic influence on the ON and OFF resistive states of the memory cell.…”