Solar grade silicon production: A review of kinetic, thermodynamic and fluid dynamics based continuum scale modeling

Diatomite‐Derived Hierarchical Porous Crystalline‐AmorphousNetwork for High‐Performance and Sustainable Si Anodes

“…A simple economic analysis was performed to estimate the production cost of D‐Si, including the diatomite, Mg, HCl, water, Ar, and power (Table S4, Supporting Information). [ 59,60 ] Taking into account the short synthesis process, the gross cost of D‐Si‐6 was calculated as ≈8.7 $ kg −1 . Although the cost is a bit higher than the price of commercial metallurgical crude Si (1–2 $ kg −1 ), the metallurgical Si cannot be utilized directly as the anode material due to its high impurities (e.g., Fe, Ca).…”

Ternary organic solar cells doped methoxyphenyl indenopyrazoloquinoline derivatives

“…With the ever-growing importance of protecting the natural environment, renewable energy sources, including photovoltaic cells, have become increasingly popular [1,2]. So far, three generations of photovoltaic cells have been developed: silicon [3], so-called semiconductor thin-layer cells [4,5] and the third generation, consisting of dyes [6,7], organic cells [8,9], polymers and perovskites [10,11] cells.…”

Yolk‐Shell‐Structured CuO−ZnO−In2O3 Trimetallic Oxide Mesocrystal Microspheres as an Efficient Catalyst for Trichlorosilane Production

“…The surface Zn/Cu and In/Cu molar ratios measured by XPS are consistent with those in bulk determined by ICP-OES (Table S3), suggesting that the distributions of ZnO and In 2 O 3 nanocrystals are homogeneous in entire CuOÀ ZnOÀ In 2 O 3 mesocrystal. Taken together, the above results clearly suggest: (1) both the nanocrystals of ZnO and In 2 O 3 are highly dispersed in the CuO framework, leading to the formation of multiple interfaces in CuOÀ ZnOÀ In 2 O 3 ; and (2) the Cu electronic states can be engineered by controlling the composition through interfacial charge transfer between different oxide nanoparticles.…”

“…At present, the majority of the solar grade high‐purity Si (hp‐Si) is produced via the Siemens process . It involves non‐catalytic hydrochlorination of metallurgical Si (m‐Si) to produce trichlorosilane (SiHCl 3 or TCS) with generation of a large amount of undesired byproduct silicon tetrachloride (SiCl 4 or STC) at the temperatures above 350 °C, and the selectivity of TCS and STC in this process is around 85 and 15 %, respectively.…”

“…This work demonstrates the possibility to decrease the amount of STC needed for the catalytic manufacture of TCS, and provides an approach to the facile synthesis of multi-component mesocrystal materials with a specific structure.At present, the majority of the solar grade high-purity Si (hp-Si) is produced via the Siemens process. [1] It involves non-catalytic hydrochlorination of metallurgical Si (m-Si) to produce trichlorosilane (SiHCl 3 or TCS) with generation of a large amount of undesired byproduct silicon tetrachloride (SiCl 4 or STC) at the temperatures above 350°C, and the selectivity of TCS and STC in this process is around 85 and 15 %, respectively. Therefore, further raising TCS selectivity or lowering reaction temperature could result in a decrease of byproduct STC output and saving energy consumption, and thus reducing TCS manufacture cost.…”