Solar cells prepared on multicrystalline silicon subjected to new gettering and passivation treatments

Литовченко, В.Г.; Klyui, N.I.; Еvtukh, А.А.; Ефремов, А. А.; Sarikov, Andrey; Popov, V.; Kostylyov, V. P.; Rasamakin, Yu.V.; Haessler, Christian; Koch, Wolfgang

doi:10.1016/s0927-0248(01)00182-9

Cited by 5 publications

(2 citation statements)

References 6 publications

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“…Earlier, we have suggested the modified getter structure that consists of porous Si with Al layer deposited on its top (combined getter) [4,5]. For multicrystalline Si wafers, this structure has demonstrated better performance as for the improvement of the recombination properties of minority charge carriers (increase in their diffusion length and lifetime) comparing to the traditional Al getters.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters

Sarikov¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. In this work, the gettering process in the multicrystalline Si wafers by the combined getter structures of the porous Si and Al layers during annealings at temperatures 600 up to 750 °C has been theoretically studied. A kinetic model based on the diffusion equation has been developed, and the characteristics of increase in the minority charge carrier diffusion length as a result of gettering annealings have been determined. The obtained results are useful for technology of multicrystalline Si solar cells to improve their properties.

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Section: Introductionmentioning

confidence: 99%

Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters

Sarikov¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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“…In this paper the investigations of gettering processes are carried out for a combined getter, including a layer of silicon with a developed surface, and a top Al film [10]. Such type of structures was used earlier for gettering monocrystalline and multicrystalline Si [11,12], but was not studied in detail. The method of mass spectrometry of neutral atoms is used for the level-by-level impurity analysis of the getter area.…”

Section: Introductionmentioning

confidence: 99%

Investigations of impurity gettering in multicrystalline silicon

Еvtukh¹

2001

Semicond. Phys. Quantum Electron. Optoelectron.

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The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface photovoltage (permitting to determine the diffusion length of nonequilibrium charge carriers). Getters formed by a silicon layer with a developed internal surface, and also combined getter (the mentioned layer covered with a thin film of aluminum) were used. It was shown that the efficiency of gettering depends on annealing temperature and character of Al depth distribution that, in turn, depends on the regimes of structurally modified silicon layer formation. The models of gettering that enabled us to explain obtained results are considered.

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Evaluation of the diffusion length of gettered multicrystalline silicon using solar cells–cross‐sectional LBIC scan

Bouaïcha¹,

Dimassi

Nouri

et al. 2005

Physica Status Solidi (a)

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The effective bulk diffusion length (L) in multicrystalline silicon was evaluated using the light‐beam‐induced‐current (LBIC) technique using a geometrical configuration in which the front and back metallic contacts cover the entire front surfaces. The latter technique was performed on solar cells in cross section. We employed this particular configuration in order to evaluate the diffusion length independently of the recombination velocity at the front surface. For this purpose, we propose a new theoretical expression of the LBIC current. The diffusion length was found to be enhanced from 33 µm to 65 µm after gettering of undesired impurities from the bulk of the multicrystalline silicon. The gettering procedure used in this work is based on the formation of sacrificial porous silicon (PS) layers on both sides of the samples and heat treatments at different temperatures. This gettering method seems to concentrate some of the unwanted impurities close to the PS regions and to remove them by dissolving the PS layers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Solar cells prepared on multicrystalline silicon subjected to new gettering and passivation treatments

Cited by 5 publications

References 6 publications

Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters

Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters

Investigations of impurity gettering in multicrystalline silicon

Evaluation of the diffusion length of gettered multicrystalline silicon using solar cells–cross‐sectional LBIC scan

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