Abstract:The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface photovoltage (permitting to determine the diffusion length of nonequilibrium charge carriers). Getters formed by a silicon layer with a developed internal surface, and also combined getter (the mentioned layer covered with a thin film of aluminum) were used. It was shown that the efficiency … Show more
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