Solar Cells Fabricated in Upgraded Metallurgical Silicon, Obtained Through Vacuum Degassing and Czochralski Growth

Marques, F. C.; Côrtes, Andresa Deoclídia Soares; Mei, Paulo Roberto

doi:10.1007/s12633-018-9860-x

Cited by 4 publications

(2 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An interesting alternative route to obtain SoG-Si is the metallurgical route, which consists of refining metallurgical grade silicon (MG-Si), containing about 98.5% Si, to attain the purity of the SoG-Si. An important process step in this route is the directional solidification of the MG-Si [1][2][3][4][5] to induce segregation of metallic impurities to the silicon ingot top. Although mechanical properties of silicon play a secondary role in the efficiency of photovoltaic cells [6], its lack of ductility [7] and toughness [8] affects the production of silicon wafers and solar panels and makes the mechanical conformation of silicon practically impossible.…”

Section: Introductionmentioning

confidence: 99%

Measurements of hardness, young s modulus, and fracture toughness of solar grade silicon obtained from metallurgical grade silicon

Nascimento¹,

Martorano²,

Almeida³

et al. 2022

Tecnol. Metal. Mater. Min.

View full text Add to dashboard Cite

Young modulus and toughness (K IC ) of bulk solar grade silicon (SoG-Si) obtained by directional solidification of metallurgical grade silicon were determined. The Young modulus was measured by the technique of impulse excitation of vibration and K IC was determined using the indentation method. Measurement values agree well with those available in the literature. The indentation method proved to be a reliable, relatively simple, inexpensive, and fast experimental method to measure K IC in SoG-Si.

show abstract

Section: Introductionmentioning

confidence: 99%

Measurements of hardness, young s modulus, and fracture toughness of solar grade silicon obtained from metallurgical grade silicon

Nascimento¹,

Martorano²,

Almeida³

et al. 2022

Tecnol. Metal. Mater. Min.

View full text Add to dashboard Cite

show abstract

“…The best PCE of c-Si solar cells is about 25% and 22% on the lab and commercial scale, respectively (Green, 2015). The c-Si solar cells require 99.9999% purity for precursors in the fabrication; the purification process is often expensive and laborious (Marques et al, 2019). Also, p-n homojunction formed by a thermal doping process and softicated technology adds directly to the manufacturing plant capital cost and photovoltaic modules (Kavlak et al, 2018;Kim et al, 2020).…”

Section: Generations Of Photovoltaic Solar Cellsmentioning

confidence: 99%

Molecular modification of dye constituents through grafting anchoring groups and pi-spacers: towards DSSCs application

Deogratias

View full text Add to dashboard Cite

Triphenylamine based dyes molecular modification by grafting anchoring groups and spacers was performed within computational framework aimed at potential materials for dye- sensitized solar cells (DSSCs) application. For the modification, benzothiadiazole-like spacers, heterocyclic anchoring groups and heteroatom doping have been taken into account. The reported structural and optoelectronic properties of the dyes were realized through density functional theory and time-dependent density functional theory using B3LYP and CAM-B3LYP functionals coupled with 6-31G(d,p) and 6-31G+(d,p) basis sets. The findings show that presence of atoms of nitrogen and sulphur in the -spacers has a beneficial impact on the material‟s properties, whereas the branched -spacer impairs the electronic light absorption characteristics of the sensitizers. The heterocyclic anchoring units result in a bathochromic shift with maximum absorption within 450 − 600 nm. The computed light harvesting efficiencies, excited-state lifetimes, electron injection and regeneration abilities prove that dyes with heterocyclic anchoring groups to be potential candidates for DSSC applications. The heteroatom doping demonstrates that the chalcogens enhance the absorption and fluorescent emission spectra of the isolated dyes in the visible and near infra-red regions with maximum wavelength 504 – 556 nm and 637 – 732 nm, respectively. Simulation of the dyes attachment to the TiO 2 surface was undertaken; two models of the crystal surface considered, TiO 2 slab and hydrogenated (TiO 2 ) 6 cluster. Among possible adsorption modes of the dye@TiO 2 complexes, monodentate, bidentate and tridentate, the bidentate mode was found thermodynamically more favourable. In both, individual dyes and dye@TiO 2 complexes, less electronegative dopants contributed to the improvement of the UV-Vis spectra and redistribution of electron density. The calculated energies of the dye@TiO 2 attachment relate to dopant heteroatoms; stronger binding is observed in the complexes with heavier heteroatoms – selenium and tellurium. The adsorption energy magnitudes range between 0.11 − 1.75 eV for the TiO 2 slab and 7.61 − 9.48 eV for (TiO 2 ) 6 cluster. Energy difference between the two binding models was found to correspond to the enthalpy of sublimation of TiO 2 from the TiO 2 anatase. One can anticipate that systematic modification of dyes‟ building blocks may lead to novel materials with suitable characteristics for application in DSSCs.

show abstract

Analysis of the Characterization of Impurities and Defects in Cast Monocrystalline Silicon with Shadows

Liu

Xia

Chen³

et al. 2022

Silicon

View full text Add to dashboard Cite

Solar Cells Fabricated in Upgraded Metallurgical Silicon, Obtained Through Vacuum Degassing and Czochralski Growth

Cited by 4 publications

References 25 publications

Measurements of hardness, young s modulus, and fracture toughness of solar grade silicon obtained from metallurgical grade silicon

Measurements of hardness, young s modulus, and fracture toughness of solar grade silicon obtained from metallurgical grade silicon

Molecular modification of dye constituents through grafting anchoring groups and pi-spacers: towards DSSCs application

Analysis of the Characterization of Impurities and Defects in Cast Monocrystalline Silicon with Shadows

Contact Info

Product

Resources

About