Solar-Blind Ultraviolet Detectors Based on High-Quality HVPE α-Ga₂O₃ Films With Giant Responsivity

Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures

“…The spectral dependencies of the photoelectric properties were measured by means of the spectrometric system based on a MonoScan 2000 monochromator (Ocean Insight, Orlando, FL, USA) and a DH-2000 Micropack lamp, described in detail in [10]. A kryptonfluorine lamp VL-6.C was used as the source of irradiation at λ = 254 nm and the light power density P = 780 µW/cm 2 .…”

“…The sensitivity of UVDs to UV radiation and their speed of operation are the main parameters characterizing their ability to detect UV radiation and the time resolution of the devices, respectively [9]. Previous works have demonstrated detectors based on Ga 2 O 3 with high values of responsivity (R), detectivity (D*), and external quantum efficiency (EQE) [10]. However, response times τ r and recovery times τ d exceeded several seconds.…”

A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact

“…Phase On/Off µFE (cm 2 /V-s) Ron (kΩ-mm) BV (V) MOCVD [39] κ-~10 8 2.43 --390 MOCVD [40] β-~10 11 11.4 --400 MOCVD [38] β-~10 5 150 3.8 240 MOCVD [41] ε---19 ----HVPE [42] β-~10 6 5.3 88.9 155 HVPE [18] α-~10 6…”

“…Attributed to its high E g , α-Ga 2 O 3 has received great interest for ultraviolet (UV) light detectors and specifically deep-UV or UV C-band light (<280 nm) [ 10 , 11 ]. Among various materials with a wide E g , including aluminum gallium nitride (AlGaN) and zinc oxide (ZnO), α-Ga 2 O 3 is particularly appropriate for large-area processes because of its relatively low growth temperature of about 500 °C.…”

“…Attributed to its high E g , α-Ga 2 O 3 has received great interest for ultraviolet (UV) light detectors and specifically deep-UV or UV C-band light (<280 nm) [10,11]. Among various materials with a wide E g , including aluminum gallium nitride (AlGaN) and zinc oxide (ZnO), α-Ga 2 O 3 is particularly appropriate for large-area processes because of its relatively low growth temperature of about 500 • C. This relatively low temperature of growth or deposition allows not only the use of conventional large-area process methods but also novel Ga 2 O 3 film deposition approaches via thermal oxidation of Ga-based wafers [12][13][14].…”