Photoresponse of large-area atomically thin β-Ga2O3 and GaN materials via liquid metal print synthesized

Chang, Chun-Ming; Wu, Cai-Ying; Huang, Chun-Wei

doi:10.1016/j.apsusc.2023.159131

Cited by 2 publications

(2 citation statements)

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“…Figure S2 shows the X-ray photoelectron spectra of Ga 3d peaks for α-Ga 2 O 3 , β-Ga 2 O 3 , and α/β-Ga 2 O 3 , the peaks centered at 20.39, 20.49, and 20.19 eV, respectively. The results obtained in this work are consistent with the literature. , …”

Section: Resultssupporting

confidence: 93%

“…The results obtained in this work are consistent with the literature. 45,46 In Figure 3a, the linear sweep-voltammetry (LSV) curves of Ga 2 O 3 NRAs in NaOH solution are depicted. The applied bias potentials range from −0.6 to 0.6 V, with on/off switching intervals of 25 s. When illuminated by a 255 nm LED light with a light intensity of 500 μW/cm 2 , the α phase Ga 2 O 3 exhibits a forward photocurrent under a positive bias (0−0.6 V) and a reverse photocurrent under a negative bias (−0.6−0 V) in NaOH solution, demonstrating a clear ambipolar photocurrent phenomenon with a switching point (V switch ) of ≈0 V relative to the saturated calomel electrode (SCE).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Photocurrent Ambipolar Behavior in Phase Junction of a Ga₂O₃ Porous Nanostructure for Solar-Blind Light Control Logic Devices

Ye,

Jin,

Cheng

et al. 2024

ACS Appl. Mater. Interfaces

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Photoelectrochemical (PEC) devices are the most similar artificial devices to the nervous system, which is expected to solve the problem of complex computer/nervous system interface (solid–liquid interface) and multifunctional integration (photoelectric fusion) required in the post-Moore era. Based on the different photocurrent ambipolar behavior and different deep ultraviolet solar-blind spectral photoresponse characteristics of α-Ga2O3 and β-Ga2O3, we designed and constructed the Ga2O3 porous nanostructure PEC device with an adjustable photocurrent bipolar behavior through constructing an α/β phase junction core–shell structure by adjusting the thickness and the surface state of the shell layer. The switching point of the α/β-Ga2O3 ambipolar photocurrent shifts toward negative values with the increase of β-Ga2O3 shell layer thicknesses, and adjustable Boolean logic gates are prepared using the voltage as the input source with a high accuracy manipulated by solar-blind deep ultraviolet light. The controllable solar-blind logic gates based on the ambipolar photocurrent behavior of α/β-Ga2O3 presented in this study offer a new path for the photoelectric device multifunctional integration needed in the post-Moore era, which can be used in the creation of Ga2O3 half adders and full adders, as well as in the construction of four-input OR gates.

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Section: Resultssupporting

confidence: 93%

Section: ■ Results and Discussionmentioning

confidence: 99%

Photocurrent Ambipolar Behavior in Phase Junction of a Ga₂O₃ Porous Nanostructure for Solar-Blind Light Control Logic Devices

Ye,

Jin,

Cheng

et al. 2024

ACS Appl. Mater. Interfaces

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Eco-friendly and Recyclable Liquid Metal Synthesis of Two-Dimensional Cr₂O₃ and CrN Nanosheets for Photoresponse and Field Effect Transistors

Qiu,

Huang

2024

ACS Appl. Electron. Mater.

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In this study, a liquid metal gas injection method was employed to prepare two-dimensional (2D) chromium oxide (Cr2O3) and chromium nitride (CrN). The process, conducted at room temperature and atmospheric pressure, eliminates the need for high temperature and high pressure conditions typically required by conventional methods, thereby reducing energy consumption. The liquid metal used is nontoxic and can be recycled, making the entire experimental procedure environmentally friendly. The resulting amorphous chromium-based semiconductors were transformed to crystalline Cr2O3 and CrN through annealing and nitridation processes. The fabrication and characterization of photodetectors revealed the unique negative photoresponse behavior of Cr2O3 and CrN, with strong correlations to their metallic resistance characteristics confirmed through temperature-resistance measurements. The field-effect transistors demonstrated the p-type semiconductor properties of Cr2O3 and the n-type semiconductor properties of CrN with energy gaps of 3.3 and 0.6 eV, respectively. This research not only illustrates the application of the liquid metal gas injection method for the preparation of two-dimensional materials but also reveals the correlation between negative photoresponse and metallic resistance, providing valuable insights for the future development of photoresponse and contributing to the academic research on 2D materials and their synthesis methods.

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Photoresponse of large-area atomically thin β-Ga2O3 and GaN materials via liquid metal print synthesized

Cited by 2 publications

References 35 publications

Photocurrent Ambipolar Behavior in Phase Junction of a Ga₂O₃ Porous Nanostructure for Solar-Blind Light Control Logic Devices

Photocurrent Ambipolar Behavior in Phase Junction of a Ga₂O₃ Porous Nanostructure for Solar-Blind Light Control Logic Devices

Eco-friendly and Recyclable Liquid Metal Synthesis of Two-Dimensional Cr₂O₃ and CrN Nanosheets for Photoresponse and Field Effect Transistors

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Photoresponse of large-area atomically thin β-Ga2O3 and GaN materials via liquid metal print synthesized

Cited by 2 publications

References 35 publications

Photocurrent Ambipolar Behavior in Phase Junction of a Ga2O3 Porous Nanostructure for Solar-Blind Light Control Logic Devices

Photocurrent Ambipolar Behavior in Phase Junction of a Ga2O3 Porous Nanostructure for Solar-Blind Light Control Logic Devices

Eco-friendly and Recyclable Liquid Metal Synthesis of Two-Dimensional Cr2O3 and CrN Nanosheets for Photoresponse and Field Effect Transistors

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Product

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Photocurrent Ambipolar Behavior in Phase Junction of a Ga₂O₃ Porous Nanostructure for Solar-Blind Light Control Logic Devices

Photocurrent Ambipolar Behavior in Phase Junction of a Ga₂O₃ Porous Nanostructure for Solar-Blind Light Control Logic Devices

Eco-friendly and Recyclable Liquid Metal Synthesis of Two-Dimensional Cr₂O₃ and CrN Nanosheets for Photoresponse and Field Effect Transistors