Sol–gel synthesis of mesoporous CaCu3Ti4O12 thin films and their gas sensing response

Parra, Rodrigo; Savú, Raluca; Ramajo, Leandro Alfredo; Ponce, Miguel Adolfo; Varela, José Arana; Castro, Miriam Susana; Bueno, Paulo Roberto; Joanni, Ednan

doi:10.1016/j.jssc.2010.03.033

Cited by 55 publications

(32 citation statements)

References 39 publications

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“…These results agree with the results obtained by Parra et al for CCTO films prepared by the sol-gel method which is a synthesis procedure similar to our method. 18 In addition, thermopower measurements (not shown here) were performed which indicate a negative Seebeck coefficient (S) and verify the n-type conductivity in our CCTO thin films. 25 On the other hand, p-type conductivity was observed by thin films deposited by vacuum-based film processing such as PLD.…”

Section: A Gas Sensing Responsesupporting

confidence: 61%

“…Recently, CaCu 3 Ti 4 O 12 (CCTO) has attracted scientific interest due to its huge dielectric constant [1][2][3][4][5][6][7] and hysteretic current-voltage profile [8][9][10][11][12] for applications in electronic devices such as random access memories, microwave devices, sensors, etc. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] However, CCTO applications in microelectronic devices such as sensors or random access memories lead to the integration of this oxide in the form of thin films on siliconbased substrates. Several studies of CCTO thin films prepared by different methods have shown that this material has multi-functional properties which are directly related to the synthesis route and the electrode/substrate used.…”

Section: Introductionmentioning

confidence: 99%

“…N-type conductivity was also reported by Parra et al in mesoporous thin films prepared by the sol-gel method. 18 On the other hand, Joanni et al showed that films prepared by rf-sputtering display p-type conductivity. 19 In light of these predictions, the main goal of this study is to investigate the multi-functionality of CCTO thin films prepared by the polymeric precursor method (PPM).…”

Section: Introductionmentioning

confidence: 99%

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Multi-functional properties of CaCu3Ti4O12 thin films

Felix

Rupp

Varela

et al. 2012

Journal of Applied Physics

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In this work, electric transport properties of CaCu 3 Ti 4 O 12 (CCTO) thin films were investigated for resistive switching, rectifying and gas sensor applications. Single phase CCTO thin films were produced by polymeric precursor method (PPM) on different substrates and their electrical properties were studied. Films produced on LNO/Si substrates have symmetrical non-ohmic current-voltage characteristics, while films deposited on Pt/Si substrates have a highly asymmetrical non-ohmic behavior which is related to a metal-semiconductor junction formed at the CCTO/Pt interface. In addition, results confirm that CCTO has a resistive switching response which is enhanced by Schottky contacts. Sensor response tests revealed that CCTO films are sensitive to oxygen gas and exhibit n-type conductivity. These results demonstrate the versatility of CCTO thin film prepared by the PPM method for gas atmosphere or bias dependent resistance applications. V C 2012 American Institute of Physics. [http://dx

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Section: A Gas Sensing Responsesupporting

confidence: 61%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Multi-functional properties of CaCu3Ti4O12 thin films

Felix

Rupp

Varela

et al. 2012

Journal of Applied Physics

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“…In particular, titanium-based perovskite oxides with formula ATiO 3 (A ¼ Pb, Sr, Ba, Zn, Ni, or Fe) presents outstanding potential in electronics [3], gas sensors [4], catalysis [5], memory devices [6], magnetic material [7], and so on. Moreover, the photoluminescence (PL) properties were observed in perovskite-type titanates, such as: (Ba,Ca)TiO 3 [8], Pb(Zr,Ti)O 3 [9], SrTiO 3 [10], and MgTiO 3 [11].…”

Section: Introductionmentioning

confidence: 99%

Structural refinement and photoluminescence properties of irregular cube-like (Ca1−xCux)TiO3 microcrystals synthesized by the microwave–hydrothermal method

Oliveira¹,

Moura²,

Mazzo³

et al. 2012

Materials Chemistry and Physics

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“…Due to the unique dielectric behavior of CCTO bulk ceramics, many research groups have initiated deposition of CCTO thin films by different deposition techniques [10][11][12][13][14][15][16] on various types of substrates [17][18][19]. Sputtering is considered as one of the most promising deposition technique for thin film deposition [20].…”

mentioning

confidence: 99%

Effect of RF sputtering power on morphological and electrical properties of calcium copper titanate thin films

Tripathy

Das

Ghosh

et al. 2017

J Mater Sci: Mater Electron

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dielectric constant, but these are limited to low temperature applications. Beyond the Curie temperature (T c ) their dielectric properties decreases dramatically, which is undesirable for device applications. Recently, CaCu 3 Ti 4 O 12 (CCTO), possessing a distorted cubic perovskite structure, has received intensive consideration due to its extraordinary dielectric behavior [7]. The dielectric constant of CCTO ceramics is in the order of 10 5 over a broad range of temperature due to its stable cubic structure [8] and also no lattice distortion has been observed in CCTO between this temperature range as confirmed by neutron diffraction and high resolution X-ray diffraction [7,8]. The origin of high permittivity in CCTO is still under debate. High dielectric behavior is the common feature in ferroelectric materials. In case of CCTO, the contribution from dipoles has been ruled out due to its centrosymmetry nature even at low temperature [7,8]. The internal barrier layer mechanism is widely accepted for explanation of giant dielectric permittivity in CCTO, where the conducting grains are separated by insulating grain boundaries [9]. Application of CCTO in microelectronics for memory devices, sensors, capacitor and varistors demands the deposition of CCTO thin films on silicon substrate.Due to the unique dielectric behavior of CCTO bulk ceramics, many research groups have initiated deposition of CCTO thin films by different deposition techniques [10-16] on various types of substrates [17][18][19]. Sputtering is considered as one of the most promising deposition technique for thin film deposition [20]. There are very few reports of deposition of CCTO thin film by RF sputtering [12,21]. Sputtering parameters like RF power, deposition pressure, substrate temperature strongly influence the structural, morphological and electrical properties of thin films. In our previous work [22], we have deposited CCTO thin film with the variation of deposition pressure on silicon Abstract Calcium copper titanate (CCTO) thin films were deposited on p-type silicon substrate by RF magnetron sputtering at various RF powers. Post deposition annealing was carried out for all the samples at 950 °C for 1 h in air atmosphere. Various types of surface morphology have been observed for CCTO thin films with the variation of RF power. The evolution of polycrystalline structure of the CCTO thin films was confirmed by XRD studies. The FTIR characteristic absorption band of CCTO was observed in the range of 400-700 cm −1 . The capacitancevoltage (C-V) and current-voltage (I-V) characteristics of the films were investigated employing Al/CCTO/Si MOS capacitors. CCTO films with higher dielectric constant, lower oxide and interface charge density were obtained at higher RF power. Leakage current was also found to be minimum for RF power of 105 W.

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Sol–gel synthesis of mesoporous CaCu3Ti4O12 thin films and their gas sensing response

Cited by 55 publications

References 39 publications

Multi-functional properties of CaCu3Ti4O12 thin films

Multi-functional properties of CaCu3Ti4O12 thin films

Structural refinement and photoluminescence properties of irregular cube-like (Ca1−xCux)TiO3 microcrystals synthesized by the microwave–hydrothermal method

Effect of RF sputtering power on morphological and electrical properties of calcium copper titanate thin films

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