Sol-gel silica-on-silicon buried-channel EDWAs

Huang, Wei; Syms, R.R.A.

doi:10.1109/jlt.2003.812417

Cited by 27 publications

(8 citation statements)

References 78 publications

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“…Lateral confinement can also be achieved in planar waveguiding films by etching rib or ridge waveguide structures. Etching techniques include Ar-ion beam etching [36,68,128,131,133,201], etching either the substrate [123,125] or over-layer (striploading) [40,87,150,174], reactive ion etching (RIE) [32,59,75,108,109,137,138,145,153,156,169,170,175,176,193], and wet chemical etching [79,129,152,157,166,177]. Of these etching methods, RIE provides the best control and resolution.…”

Section: Waveguide Fabrication Methodsmentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

310

161

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Erbium-doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5-1.6 μm. Er-doped fiber amplifiers enable efficient, stable amplification of high-speed, wavelength-division-multiplexed signals, thus continue to dominate as part of the backbone of longhaul telecommunications networks. At the same time, Er-doped fiber lasers see many applications in telecommunications as well as in biomedical and sensing environments. Over the last 20 years significant efforts have been made to bring these advantages to the chip level. Device integration decreases the overall size and cost and potentially allows for the combination of many functions on a single tiny chip. Besides technological issues connected to the shorter device lengths and correspondingly higher Er concentrations required for high gain, the choice of appropriate host material as well as many design issues come into play in such devices. In this contribution the important developments in the field of Er-doped integrated waveguide amplifiers and lasers are reviewed and current and future potential applications are explored. The vision of integrating such Er-doped gain devices with other, passive materials platforms, such as silicon photonics, is discussed.

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Section: Waveguide Fabrication Methodsmentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

310

161

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“…Silicate-based glasses and glass-ceramics have been extensively described in the literature for waveguide manufacturing. Among several silicate materials, the SiO 2 -TiO 2 and SiO 2 -HfO 2 systems have been used to produce Er 3+ -doped planar waveguides by the sol-gel route [4][5][6][7][8][9][10][11][12][13][14][15][16]. Particularly, the Er 3+ -activated SiO 2 -HfO 2 planar waveguide has been shown to be a promising material for 1.5 lm applications, mainly because of its efficient luminescence quantum yield, effective broad bandwidth, and attenuation coefficient as low as 0.8 dB/cm at 1.5 lm [7,8,12].…”

Section: Introductionmentioning

confidence: 99%

Active planar waveguides based on sol–gel Er3+-doped SiO2–ZrO2 for photonic applications: Morphological, structural and optical properties

Gonçalves

Guimaraes

Ferrari

et al. 2008

Journal of Non-Crystalline Solids

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“…In addition, optical devices, including buried-channel erbium-doped waveguide amplifiers, microlenses, one-dimensional photonic crystal devices and external-cavity distributed Bragg reflector ͑DBR͒ laser have been achieved using the sol-gel method. [6][7][8][9] Here we report a new method to fabricate both erbium-doped microlasers and Raman microlasers on a silicon chip using sol-gel films as the base material for microtoroid formation. In one series of experiments, erbium-doped sol-gel films are used to create low threshold microlasers.…”

mentioning

confidence: 99%

Erbium-doped and Raman microlasers on a silicon chip fabricated by the sol–gel process

Yang¹,

Carmon²,

Min³

et al. 2005

Applied Physics Letters

148

117

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We report high-Q sol-gel microresonators on silicon chips, fabricated directly from a sol-gel layer deposited onto a silicon substrate. Quality factors as high as 2.5ϫ 10 7 at 1561 nm were obtained in toroidal microcavities formed of silica sol-gel, which allowed Raman lasing at absorbed pump powers below 1 mW. Additionally, Er 3+ -doped microlasers were fabricated from Er 3+ -doped sol-gel layers with control of the laser dynamics possible by varying the erbium concentration of the starting sol-gel material. Continuous lasing with a threshold of 660 nW for erbium-doped microlaser was also obtained. Recently, a chip-based silica resonator structure in the form of a microtoroid has demonstrated ultrahigh-Q-factors in the range of 100 million. 1 By coating these high-Q microcavities with erbium-doped sol-gel films 2 or by beginning with erbium implanted silica layers, 3 low threshold rareearth-doped microlasers on-a-chip have been demonstrated. In another study, the realization of integrated Raman microlasers beginning with a layer of thermally-grown silica has been achieved. 4 Microlasers on silicon chips are especially interesting because they are integrable with other optical or electric components. In this work, we demonstrate the possibility of making microlasers directly from the sol-gel layers on the silicon wafer. The sol-gel method for preparing silica and silicate from a metal alkoxide precursor provides a versatile and cost-effective way to fabricate various components on silicon chips. It combines control of composition and microstructure at the molecular level with the ability to shape materials in bulk, fiber, powder, and thin film forms. 5 This technique allows a wide variety of thin films to be deposited on various substrates. In addition, optical devices, including buried-channel erbium-doped waveguide amplifiers, microlenses, one-dimensional photonic crystal devices and external-cavity distributed Bragg reflector ͑DBR͒ laser have been achieved using the sol-gel method. 6-9 Here we report a new method to fabricate both erbium-doped microlasers and Raman microlasers on a silicon chip using sol-gel films as the base material for microtoroid formation. In one series of experiments, erbium-doped sol-gel films are used to create low threshold microlasers. In a second set of experiments, pure silica sol-gel layers are processed into ultrahigh-Q Raman microlasers. Both of these cases demonstrate the ability to use spin coating of sol-gel films as a processing alternative to deposition or oxidation methods for silica layer formation.The sol-gel solution was prepared by hydrolyzing tetraethoxysilane ͑TEOS͒ using water with the molar ratio of water to TEOS around 1-2. Hydrochloric acid was added to make the solution in acid condition. Er 3+ ions were introduced by adding Er͑NO͒ 3 to achieve the desired Er 3+ concentration. After reaction at 70°C for 3 h, a viscous solution was formed. The silica sol-gel film was then deposited on a silicon substrate by the spin-coating method. Different thicknesses of the s...

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Sol-gel silica-on-silicon buried-channel EDWAs

Cited by 27 publications

References 78 publications

Erbium‐doped integrated waveguide amplifiers and lasers

Erbium‐doped integrated waveguide amplifiers and lasers

Active planar waveguides based on sol–gel Er3+-doped SiO2–ZrO2 for photonic applications: Morphological, structural and optical properties

Erbium-doped and Raman microlasers on a silicon chip fabricated by the sol–gel process

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