Sol-gel prepared amorphous Ta2O5 thin film for application in high LIDT antireflection coating and UV photodetection

Pal, Srimanta; Kamparath, Rajiv; Subrahmanyam, V.; Sharma, Neha; Jana, Subhajit; Karwal, Sharad; Rajput, Parasmani; Shaikh, Asiya F.; Mukherjee, C.; Jha, S. N.; Benerji, N.S.

doi:10.1016/j.optmat.2023.114097

Cited by 5 publications

(1 citation statement)

References 59 publications

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“…The properties of the thin film greatly depend upon the methods of preparation and post-deposition treatments. Though preparation of high-quality Ta 2 O 5 film is a challenging issue, many possible methods are used to fabricate Ta 2 O 5 thin film such as chemical vapor deposition (CVD) technique [27], thermal oxidation [28], e-beam evaporation [29], atomic layer deposition [30], anodization [31], DC sputtering [32], RF sputtering [20] and sol-gel process [33]. Among these techniques, RF reactive magnetron sputtering has many advantages due to its low deposition temperature, non-toxic approach, uniformity, conformal coverage, and high yield [34][35][36].…”

Section: Introductionmentioning

confidence: 99%

Modulation of electrical properties of sputtered Ta₂O₅ films by variation of RF power and substrate temperature

Sahoo,

Pradhan,

Ghosh

et al. 2024

Phys. Scr.

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Dielectric thin films are important building blocks of microelectronic devices, and hence, research on the development of high-k dielectric thin films has drawn tremendous research interest. In this research, thin films of tantalum oxide (Ta2O5), a high-k dielectric material, are deposited on the Si substrate by the radio frequency (RF) magnetron sputtering technique. During the deposition of Ta2O5 thin film, the sputtering parameters such as sputtering power and substrate temperature were systematically varied, and post-deposition structural, morphological, and electrical properties of sputtered Ta2O5 films are studied by X-ray diffraction, Fourier transform infrared spectroscopy, atomic force microscope, capacitance-voltage (C-V) and current-voltage (I-V) measurement techniques. The annealed Ta2O5 thin film at the temperature of 900 °C for 1 hour possesses polycrystalline nature with β – phase orthorhombic crystal structure. The film deposited at 150 W and substrate temperature at room temperature has shown comparatively lower surface roughness, which depicts the energy, and mobility of adatoms greatly influenced by RF power and substrate temperature. With the increase in sputtering power, the oxide charge density (Qox) is found to increase. On the other hand, Qox is found to decrease with the increase in substrate temperature. The film deposited at RF power of 150 W and substrate temperature of 300 °C is found to be of high dielectric constant, low oxide and interface charge density, and lower leakage current.

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Section: Introductionmentioning

confidence: 99%

Modulation of electrical properties of sputtered Ta₂O₅ films by variation of RF power and substrate temperature

Sahoo,

Pradhan,

Ghosh

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

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Fast-response ultraviolet photodetector based on Ta2O5 thin film

Singh,

Alam,

Souayeh

et al. 2023

J Mater Sci: Mater Electron

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Plasma-enhanced atomic-layer-deposited HfO2–SiO2 nanolaminates for broadband antireflection coatings

Zhang,

Zeng,

Song

et al. 2024

Optical Materials

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Sol-gel prepared amorphous Ta2O5 thin film for application in high LIDT antireflection coating and UV photodetection

Cited by 5 publications

References 59 publications

Modulation of electrical properties of sputtered Ta₂O₅ films by variation of RF power and substrate temperature

Modulation of electrical properties of sputtered Ta₂O₅ films by variation of RF power and substrate temperature

Fast-response ultraviolet photodetector based on Ta2O5 thin film

Plasma-enhanced atomic-layer-deposited HfO2–SiO2 nanolaminates for broadband antireflection coatings

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Sol-gel prepared amorphous Ta2O5 thin film for application in high LIDT antireflection coating and UV photodetection

Cited by 5 publications

References 59 publications

Modulation of electrical properties of sputtered Ta2O5 films by variation of RF power and substrate temperature

Modulation of electrical properties of sputtered Ta2O5 films by variation of RF power and substrate temperature

Fast-response ultraviolet photodetector based on Ta2O5 thin film

Plasma-enhanced atomic-layer-deposited HfO2–SiO2 nanolaminates for broadband antireflection coatings

Contact Info

Product

Resources

About

Modulation of electrical properties of sputtered Ta₂O₅ films by variation of RF power and substrate temperature

Modulation of electrical properties of sputtered Ta₂O₅ films by variation of RF power and substrate temperature