Sol-Gel preparation of high transmittance of infrared antireflective coating for TeO2 crystals

Shao, Ximing; Huang, Jian; Fei, Guang Tao; Wei, Yong; Yuan, Li Gang; Wang, Biao

doi:10.1016/j.infrared.2021.103881

Cited by 7 publications

(4 citation statements)

References 29 publications

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“…Increasing the pulses from 200p to 350p causes a decrease in transmission, as shown by the spectra. Light absorption increases, leading to more electronic transitions between the valence and conduction bands, which causes this effect[23]. Observed at the longer wavelength range, as shown in the Figure, the transmittance spectrum showed distinct interference fringes, proving the film's thickness uniformity by reflecting light from both sides.…”

mentioning

confidence: 87%

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

Suad M.Kadhim

2024

IJNeaM

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Pulsed laser deposition was used to create tin sulfide (SnS) nanoparticles with a Nd:YAG laser (700 mJ) with laser pulses of (200, 250, 300, and 350 pulses). Nanoparticles were created and investigated using XRD, AFM, and UV-Vis spectroscopy to understand their optical, topographical, and electrical properties. After that, a SnS photodetector was built for the first time, and its performance, photoresponse, and sensitivity were evaluated. The development of monocrystalline SnS films was confirmed by X-ray diffraction (XRD) examination. Clear crystallization with increased crystalline size and the optimum orientation was observed in the sample synthesized SnS thin film treated with 300 pulses. The crystallite size increased from 44 at 200 to 77 nm for 350 pulses. These films were characterized by better surface morphology with (111) preferred crystals. In addition, atomic force microscopy (AFM) studies showed that the average diameter of generated SnS nanoparticles rose from (39.4 nm to 64.7) nm when the laser pulses increased in pulsed laser deposition. Transmission measurements were used to determine the films' absorption coefficient energy gap (Eg), and they showed that the optical transition was direct and that the transmittance value dropped with increasing laser pulses. Band gap energy is reduced from 2.139 to 1.773 eV. Moreover, Hall Effect measurements on all samples demonstrate that all thin films were n-type, with charge carrier concentration increasing with increased pulses and carrier mobility decreasing with increased pulses. The photodetectors ' photosensitivity was evaluated in the dark after depositing Al contacts on SnS thin films through a metal mask. The Pulses of enhancement cause a red shift in the values of particular detectivity and quantum efficiency. The highest responsivity was obtained at 350 pulses, 6.72×10−1 AW−1. The high (QE) of 150% at 200 p and detectivity of 2.9×1011 cm, Hz1/2.W-1 at 300p.

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confidence: 87%

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

Suad M.Kadhim

2024

IJNeaM

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“…Many researchers have been committed to developing many effective methods to improve the optical properties of TeO 2 single crystal. It has been found that antireflective coating can reduce the Fresnel reflection loss of TeO 2 single crystal 13 . In addition, Mangin et al.…”

Section: Introductionmentioning

confidence: 99%

“…It has been found that antireflective coating can reduce the Fresnel reflection loss of TeO 2 single crystal. 13 In addition, Mangin et al also developed a PtTe 2 crucible for the growth of TeO 2 single crystals with higher transmittance. 14 However, there is still a lack of studies on finding an effective method to optimize the intrinsic optical properties of the TeO 2 single crystal.…”

Section: Introductionmentioning

confidence: 99%

Interstitial doping of Mn⁴⁺ ions: An effective method to optimize the optical properties of TeO₂ single crystal

Ding,

Tan,

Deng

et al. 2024

J Am Ceram Soc.

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TeO2 single crystal has drawn much attention in recent years due to its excellent acousto‐optic (AO) performance in the field of spectral imaging and optical processing. The optical properties of TeO2 single crystal are critical for the fabrication of AO devices. To improve the optical properties of the TeO2 single crystal, Mn4+ ions were doped into the TeO2 lattice. Herein, bulk TeO2 single crystal and TeO2:0.02Mn4+ single crystal have been successfully grown by a Bridgman method. Compared with the TeO2 single crystal, a 30% transmittance increase was observed in the TeO2:0.02Mn4+ single crystal. Furthermore, the TeO2:0.02Mn4+ single crystal shows a smaller extinction coefficient (≤0.01) in the Vis–NIR region, indicating less optical loss. The bandgap energy of TeO2:0.02Mn4+ was broadened from 3.360 to 3.635 eV. In addition, TeO2:0.02Mn4+ single crystal exhibits a higher refractive index (about 2.244), which indicates that TeO2:0.02Mn4+ single crystal is a potential medium for high‐efficiency AO devices.

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“…To ensure a high transmittance of light, low-refractive nanoporous single-layer films are applied to the glass. For example, the literature discusses optical single-layer quarter-wave antireflection coatings based on nanoporous silicon dioxide obtained from sol compositions of a special chemical content, and also considers the technological parameters of the coating process and the temperature regime of gel annealing [ 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ].…”

Section: Introductionmentioning

confidence: 99%

Novel Antireflection Coatings Obtained by Low-Temperature Annealing in the Presence of Tetrabutylammonium Bromide and Gold Nanoparticles

et al. 2022

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In this work, nanoporous antireflective coatings on silicate glass were obtained from silicon dioxide sol compositions by the sol-gel method in the presence of quaternary ammonium salt (tetrabutylammonium bromide) at different annealing temperatures (200–250 °C). Varying the salt concentration from 3 to 5 wt.%, we achieved the transmittance of the coatings of about 97% at 250 °C in comparison with 91% for clean glass in the wavelength range from 400 to 1100 nm. The addition of gold nanoparticles to the composition containing 5 wt.% tetrabutylammonium bromide allowed us to decrease the annealing temperature to 200 °C, preserving the transmittance at the level of 96.5%. For this case, the optimal concentration of gold nanoparticles is determined (2.6 × 10−9 mol/mL). According to the SEM analysis, the obtained antireflective coatings contain pores with a minimum area size up to 4 nm2.

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Sol-Gel preparation of high transmittance of infrared antireflective coating for TeO2 crystals

Cited by 7 publications

References 29 publications

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

Interstitial doping of Mn⁴⁺ ions: An effective method to optimize the optical properties of TeO₂ single crystal

Novel Antireflection Coatings Obtained by Low-Temperature Annealing in the Presence of Tetrabutylammonium Bromide and Gold Nanoparticles

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Sol-Gel preparation of high transmittance of infrared antireflective coating for TeO2 crystals

Cited by 7 publications

References 29 publications

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

Interstitial doping of Mn4+ ions: An effective method to optimize the optical properties of TeO2 single crystal

Novel Antireflection Coatings Obtained by Low-Temperature Annealing in the Presence of Tetrabutylammonium Bromide and Gold Nanoparticles

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Interstitial doping of Mn⁴⁺ ions: An effective method to optimize the optical properties of TeO₂ single crystal